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Category:Andrew Gaul of Halfmoon NY (US)
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Pages in category "Andrew Gaul of Halfmoon NY (US)"
The following 10 pages are in this category, out of 10 total.
1
- 17455937. REDUCED PARASITIC RESISTANCE TWO-DIMENSIONAL MATERIAL FIELD-EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17457667. HIGH-DENSITY METAL-INSULATOR-METAL CAPACITOR INTEGRATION WTH NANOSHEET STACK TECHNOLOGY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17524541. GATE CUT SUBSEQUENT TO REPLACEMENT GATE simplified abstract (International Business Machines Corporation)
- 18067710. SELF-ALIGNED GATE METAL WITH TOP-DIELECTRIC ISOLATION simplified abstract (International Business Machines Corporation)
- 18087990. GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS simplified abstract (International Business Machines Corporation)
- 18152790. TRANSISTOR GATE STACK FORMATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
I
- International business machines corporation (20240204079). SELF-ALIGNED GATE METAL WITH TOP-DIELECTRIC ISOLATION simplified abstract
- International business machines corporation (20240213315). GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS simplified abstract
- International business machines corporation (20240234516). TRANSISTOR GATE STACK FORMATION simplified abstract
- International business machines corporation (20240290860). SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEET FIELD EFFECT TRANSISTORS simplified abstract