Canon kabushiki kaisha (20240266372). PHOTOELECTRIC CONVERSION APPARATUS AND EQUIPMENT simplified abstract
Contents
PHOTOELECTRIC CONVERSION APPARATUS AND EQUIPMENT
Organization Name
Inventor(s)
DAIKI Shirahige of Kanagawa (JP)
PHOTOELECTRIC CONVERSION APPARATUS AND EQUIPMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240266372 titled 'PHOTOELECTRIC CONVERSION APPARATUS AND EQUIPMENT
The abstract describes a photoelectric conversion apparatus with a stacked structure of a first semiconductor layer containing a photoelectric conversion element and a second semiconductor layer containing a pixel circuit.
- The second semiconductor layer has multiple through electrodes.
- The pixel circuit includes a pixel transistor with a gate electrode forming a channel between two regions acting as a source or drain.
- The gate electrode has two sides near the regions, extending in intersecting directions.
Potential Applications: - Solar panels - Image sensors - Photodetectors
Problems Solved: - Efficient photoelectric conversion - Pixel circuit integration
Benefits: - Improved energy conversion efficiency - Enhanced image quality - Compact design
Commercial Applications: Title: "Advanced Photoelectric Conversion Technology for Solar Panels" This technology can be utilized in the development of high-performance solar panels for residential, commercial, and industrial applications, leading to increased energy efficiency and cost savings.
Questions about the technology: 1. How does the pixel circuit contribute to the overall performance of the photoelectric conversion apparatus? 2. What are the advantages of having through electrodes in the second semiconductor layer?
Original Abstract Submitted
a photoelectric conversion apparatus in which a first semiconductor layer comprising a photoelectric conversion element and a second semiconductor layer comprising a pixel circuit are stacked, is provided. a plurality of through electrodes are arranged in the second semiconductor layer. the pixel circuit includes a pixel transistor comprising a first region and a second region as a source or a drain, and a gate electrode arranged on a main surface of the second semiconductor layer to form a channel between a first end portion of the first region and a second end portion of the second region. the gate electrode includes a first side in the proximity of the first end portion and a second side in the proximity of the second end portion, and the first side and the second side extend in directions intersecting each other, respectively.
