Canon kabushiki kaisha (20240180014). METHOD FOR MANUFACTURING PHOTORESPONSIVE ARRAY ELEMENT simplified abstract

From WikiPatents
Jump to navigation Jump to search

METHOD FOR MANUFACTURING PHOTORESPONSIVE ARRAY ELEMENT

Organization Name

canon kabushiki kaisha

Inventor(s)

TAKAYUKI Teshima of Kanagawa (JP)

METHOD FOR MANUFACTURING PHOTORESPONSIVE ARRAY ELEMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240180014 titled 'METHOD FOR MANUFACTURING PHOTORESPONSIVE ARRAY ELEMENT

Simplified Explanation

The abstract describes a patent application for a process where a resist layer containing a photoresponsive material in a photoresist is layer-transferred from a film to a bank substrate, followed by exposure and development to remove an unexposed resist layer.

  • Resist layer with photoresponsive material transferred from film to bank substrate
  • Exposure and development process to remove unexposed resist layer

Potential Applications

This technology could be applied in the manufacturing of microelectronics, photolithography, and semiconductor devices.

Problems Solved

This innovation streamlines the process of transferring and developing resist layers, improving efficiency and accuracy in microfabrication processes.

Benefits

- Enhanced precision in resist layer development - Increased efficiency in manufacturing processes - Improved quality control in semiconductor device production

Potential Commercial Applications

"Advanced Resist Layer Transfer Process for Semiconductor Manufacturing"

Possible Prior Art

Prior art may include similar methods of resist layer transfer and development in semiconductor manufacturing processes.

Unanswered Questions

How does this technology compare to existing resist layer transfer methods in terms of efficiency and accuracy?

This article does not provide a direct comparison with existing methods.

What specific types of photoresponsive materials are used in the resist layer for this process?

The abstract does not specify the exact photoresponsive materials utilized in the resist layer.


Original Abstract Submitted

a resist layer containing a photoresponsive material in a photoresist is layer-transferred from a film on which the resist layer is formed to a bank substrate, and exposure and development are performed so as to remove an unexposed resist layer.