Canon kabushiki kaisha (20240178265). SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Organization Name
Inventor(s)
HIROSHI Sekine of Kanagawa (JP)
KAZUHIRO Morimoto of Kanagawa (JP)
SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178265 titled 'SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Simplified Explanation
The semiconductor device manufacturing method described in the abstract involves preparing two substrates, forming semiconductor devices and wiring layers on each substrate, thinning one substrate to expose an insulating region, forming a through-electrode to connect to the wiring layer, and joining the substrates to be electrically connected.
- Preparation of two substrates: The method starts by preparing a first substrate with two planes and a second substrate with two planes facing each other.
- Formation of semiconductor devices and wiring layers: A first semiconductor device and wiring layer are formed near the first plane in the first substrate, while an insulating region is formed near the third plane in the second substrate.
- Thinning of the second substrate: After forming the second semiconductor device and wiring layer, the second substrate is thinned from the fourth plane to expose the insulating region.
- Formation of through-electrode: A through-electrode is then formed to penetrate through the insulating region and connect to the second wiring layer.
- Joining of substrates: Finally, the first and second substrates are joined together to be electrically connected.
Potential Applications
This technology can be applied in the manufacturing of advanced semiconductor devices with improved performance and compact design.
Problems Solved
This method solves the problem of integrating multiple semiconductor devices and wiring layers in a compact and efficient manner.
Benefits
The benefits of this technology include increased device density, improved electrical connectivity, and enhanced overall device performance.
Potential Commercial Applications
One potential commercial application of this technology is in the production of high-density integrated circuits for various electronic devices.
Possible Prior Art
Prior art may include methods for integrating semiconductor devices and wiring layers in a compact structure, but the specific process described in this patent application may offer unique advantages in terms of efficiency and performance.
Unanswered Questions
How does this method compare to traditional semiconductor manufacturing processes?
This article does not provide a direct comparison between this method and traditional semiconductor manufacturing processes. It would be helpful to understand the specific advantages and disadvantages of this new method in relation to existing techniques.
What are the potential limitations or challenges in implementing this manufacturing method on a large scale?
The article does not address potential limitations or challenges in implementing this manufacturing method on a large scale. It would be important to consider factors such as scalability, cost-effectiveness, and production efficiency when evaluating the practicality of this technology for mass production.
Original Abstract Submitted
a semiconductor device manufacturing method including: preparing a first substrate having a first plane and a second plane facing the first plane; preparing a second substrate having a third plane and a fourth plane facing the third plane; forming a first semiconductor device and a first wiring layer near the first plane in the first substrate; forming an insulating region near the third plane in the second substrate; after the forming the insulating region, forming a second semiconductor device and a second wiring layer near the third plane; after the forming the second semiconductor device and the second wiring layer, thinning the second substrate from the fourth plane to expose the insulating region; after exposing, forming a through-electrode configured to penetrate through the insulating region and be connected to the second wiring layer; and joining the first and second substrates so as to be electrically connected to each other.
