Canon kabushiki kaisha (20240178262). PHOTOELECTRIC CONVERSION APPARATUS simplified abstract

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PHOTOELECTRIC CONVERSION APPARATUS

Organization Name

canon kabushiki kaisha

Inventor(s)

HIROYUKI Tsuchiya of Tokyo (JP)

HIROSHI Sekine of Kanagawa (JP)

KAZUHIRO Morimoto of Kanagawa (JP)

PHOTOELECTRIC CONVERSION APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240178262 titled 'PHOTOELECTRIC CONVERSION APPARATUS

Simplified Explanation

The patent application describes a photoelectric conversion apparatus with an avalanche photodiode, including an oxide film on a semiconductor layer and a member on the oxide film. The member overlaps the boundary between two semiconductor regions, generating a potential gradient for signal charge in the semiconductor layer.

  • The photoelectric conversion apparatus includes an avalanche photodiode.
  • An oxide film is placed on a semiconductor layer.
  • A member is positioned on the oxide film, overlapping the boundary between two semiconductor regions.
  • The member has a different work function than the semiconductor regions, creating a potential gradient for signal charge in the semiconductor layer.

Potential Applications

The technology described in the patent application could be used in:

  • High-speed imaging systems
  • Medical imaging devices
  • Security cameras

Problems Solved

This technology addresses issues such as:

  • Improving signal charge generation
  • Enhancing the efficiency of photoelectric conversion
  • Increasing the sensitivity of photodiodes

Benefits

The benefits of this technology include:

  • Higher quality images
  • Faster response times
  • Improved performance in low-light conditions

Potential Commercial Applications

The technology could be applied in various commercial sectors, including:

  • Consumer electronics
  • Surveillance systems
  • Scientific instruments

Possible Prior Art

One possible prior art for this technology could be the use of avalanche photodiodes in photoelectric conversion devices.

=== What are the specific materials used in the oxide film and semiconductor layer? The patent application does not specify the exact materials used in the oxide film and semiconductor layer.

=== How does the potential gradient for signal charge impact the overall performance of the photoelectric conversion apparatus? The patent application does not provide detailed information on how the potential gradient for signal charge affects the performance of the apparatus.


Original Abstract Submitted

a photoelectric conversion apparatus including an avalanche photodiode is provided. the photoelectric conversion apparatus includes an oxide film disposed on a semiconductor layer and a member provided on the oxide film. the member is disposed to overlap at least a boundary between a first semiconductor region and a third semiconductor region in plan view. the work function of the member differs from the work function of each of the first semiconductor region and the third semiconductor region so that a potential gradient for signal charge is generated in a depth direction of the semiconductor layer at at least the boundary.