CAPACITOR AND MEMORY DEVICE: abstract simplified (18205715)

• This abstract for appeared for patent application number 18205715 Titled 'CAPACITOR AND MEMORY DEVICE'

Simplified Explanation

The abstract describes a capacitor and a DRAM device. The capacitor consists of a lower electrode, a dielectric layer structure, and an upper electrode. The dielectric layer structure is made up of three layers stacked in sequence: a first zirconium oxide layer, a hafnium oxide layer, and a second zirconium oxide layer. The hafnium oxide layer has either a tetragonal crystal phase or an orthorhombic crystal phase.

Original Abstract Submitted

A capacitor and a DRAM device, the capacitor including a lower electrode; a dielectric layer structure on the lower electrode, the dielectric layer structure including a first zirconium oxide layer, a hafnium oxide layer, and a second zirconium oxide layer sequentially stacked; and an upper electrode on the dielectric layer structure, wherein the hafnium oxide layer has a tetragonal crystal phase or an orthorhombic crystal phase.