Boe technology group co., ltd. (20240237367). DISPLAY SUBSTRATE, MANUFACTURING METHOD AND DISPLAY DEVICE simplified abstract

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DISPLAY SUBSTRATE, MANUFACTURING METHOD AND DISPLAY DEVICE

Organization Name

boe technology group co., ltd.

Inventor(s)

Changhan Hsieh of Beijing (CN)

DISPLAY SUBSTRATE, MANUFACTURING METHOD AND DISPLAY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240237367 titled 'DISPLAY SUBSTRATE, MANUFACTURING METHOD AND DISPLAY DEVICE

The present disclosure introduces a display substrate, a manufacturing method, and a display device. The display substrate consists of a base substrate, a thin film transistor with specific electrode thicknesses, a protection layer with via holes and a conductive connection pattern, and a data line made of the same material as the gate electrode.

  • Thin film transistor with source electrode, drain electrode, gate electrode, and active layer
  • Protection layer with first and second via holes and a conductive connection pattern
  • Data line coupled to the source electrode through the conductive connection pattern
  • Source electrode and drain electrode thicknesses below a predetermined threshold
  • Data line made of the same material as the gate electrode

Potential Applications: - This technology can be applied in the manufacturing of high-resolution displays for various electronic devices such as smartphones, tablets, and televisions. - It can also be used in the development of flexible and foldable displays due to the thin and flexible nature of the substrate.

Problems Solved: - Addresses the need for improved display quality and performance in electronic devices. - Solves issues related to the thickness and flexibility of display substrates in modern technology.

Benefits: - Enhanced display resolution and performance. - Increased durability and flexibility in display manufacturing. - Potential cost savings in production processes.

Commercial Applications: Title: Advanced Display Substrate Technology for Electronic Devices This technology can revolutionize the display industry by offering high-quality, flexible, and durable display substrates for a wide range of electronic devices. The market implications include increased demand for innovative display solutions in consumer electronics and potential partnerships with manufacturers for mass production.

Prior Art: Readers interested in prior art related to this technology can explore patents and research papers in the field of display substrates, thin film transistors, and flexible display technologies.

Frequently Updated Research: Researchers are constantly exploring new materials and manufacturing techniques to further improve the performance and flexibility of display substrates. Stay updated on the latest advancements in thin film transistor technology and display manufacturing processes to stay ahead in the industry.

Questions about Display Substrate Technology: 1. How does the thickness of the source and drain electrodes impact the performance of the thin film transistor? The thickness of the electrodes affects the conductivity and efficiency of the transistor, influencing the overall display quality and performance.

2. What are the potential challenges in integrating the data line with the source electrode through the conductive connection pattern? Integrating the data line with the source electrode requires precise manufacturing processes to ensure proper connectivity and functionality in the display substrate.


Original Abstract Submitted

the present disclosure provides a display substrate, a manufacturing method, and a display device. the display substrate includes: a base substrate; a thin film transistor located on the base substrate and including a source electrode, a drain electrode, a gate electrode and an active layer, and thicknesses of the source electrode and the drain electrode being less than a predetermined threshold; a protection layer located at a side of the thin film transistor away from the base substrate and including a first via hole and a second via hole, and a conductive connection pattern being arranged in the first via hole; and a data line arranged at a same layer and made of a same material as the gate electrode, the data line being coupled to the source electrode of the thin film transistor through the conductive connection pattern in the first via hole of the protection layer.