Boe technology group co., ltd. (20240234532). THIN FILM TRANSISTOR, MANUFACTURING METHOD FOR THE SAME, AND DISPLAY SUBSTRATE simplified abstract

THIN FILM TRANSISTOR, MANUFACTURING METHOD FOR THE SAME, AND DISPLAY SUBSTRATE

Organization Name

boe technology group co., ltd.

Inventor(s)

Hehe Hu of Beijing (CN)

Dongfang Wang of Beijing (CN)

Fengjuan Liu of Beijing (CN)

Ce Ning of Beijing (CN)

Zhengliang Li of Beijing (CN)

Jiayu He of Beijing (CN)

Yan Qu of Beijing (CN)

Kun Zhao of Beijing (CN)

Jie Huang of Beijing (CN)

Liping Lei of Beijing (CN)

Yunsik Im of Beijing (CN)

Shunhang Zhang of Beijing (CN)

Nianqi Yao of Beijing (CN)

Feifei Li of Beijing (CN)

THIN FILM TRANSISTOR, MANUFACTURING METHOD FOR THE SAME, AND DISPLAY SUBSTRATE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240234532 titled 'THIN FILM TRANSISTOR, MANUFACTURING METHOD FOR THE SAME, AND DISPLAY SUBSTRATE

The present disclosure introduces a thin-film transistor (TFT) along with a manufacturing method and a display substrate in the field of TFT technology.

• Key Features and Innovation:

   - TFT includes a base substrate, gate electrode, active layer, source electrode, and drain electrode.
   - The resistance between the gate electrode and the drain electrode is greater than the resistance between the gate electrode and the source electrode.
   - This design increases the withstand voltage range of the TFT.

• Potential Applications:

   - This technology can be used in the manufacturing of high-performance displays, such as LCDs and OLEDs.
   - It can also be applied in various electronic devices requiring efficient and reliable TFTs.

• Problems Solved:

   - Enhances the withstand voltage range of TFTs, improving their overall performance and durability.
   - Provides a more stable and efficient TFT design for use in display technologies.

• Benefits:

   - Increased reliability and durability of TFTs.
   - Improved performance in electronic devices and display technologies.
   - Enhanced efficiency in manufacturing processes.

• Commercial Applications:

   - Title: "Advanced TFT Technology for High-Performance Displays"
   - This technology can be utilized in the production of smartphones, tablets, TVs, and other electronic devices with displays.
   - It can benefit display manufacturers looking to enhance the quality and performance of their products.

• Prior Art:

   - Further research can be conducted on TFT designs and manufacturing methods in the field of display technologies to explore prior art related to this technology.

• Frequently Updated Research:

   - Stay updated on advancements in TFT technology, display substrates, and manufacturing methods to incorporate the latest innovations into product development.

Questions about TFT Technology: 1. What are the specific advantages of the increased withstand voltage range in TFTs?

  - The increased withstand voltage range improves the reliability and durability of TFTs, making them more suitable for various applications requiring higher voltage tolerance.

2. How does the resistance distribution between the gate electrode and the source/drain electrodes impact the performance of the TFT?

  - The resistance distribution ensures proper functionality and efficiency of the TFT by regulating the flow of current within the transistor.

Original Abstract Submitted

the present disclosure provides a tft, a manufacturing method and a display substrate, and it relates to the field of tft technology. the tft includes: a base substrate; a gate electrode arranged on the base substrate; an active layer arranged at a side of the gate electrode away from the base substrate, an orthogonal projection of the active layer onto the base substrate overlapping with an orthogonal projection of the gate electrode onto the base substrate; and a source electrode and a drain electrode arranged at a side of the active layer away from the base substrate and coupled to the active layer. a resistance between the gate electrode and the drain electrode is greater than a resistance between the gate electrode and the source electrode. according to the present disclosure, it is able to increase a withstand voltage range of the tft.