Boe technology group co., ltd. (20240224576). LIGHT EMITTING TRANSISTOR, MANUFACTURING METHOD THEREOF AND DISPLAY SUBSTRATE simplified abstract
Contents
LIGHT EMITTING TRANSISTOR, MANUFACTURING METHOD THEREOF AND DISPLAY SUBSTRATE
Organization Name
boe technology group co., ltd.
Inventor(s)
LIGHT EMITTING TRANSISTOR, MANUFACTURING METHOD THEREOF AND DISPLAY SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240224576 titled 'LIGHT EMITTING TRANSISTOR, MANUFACTURING METHOD THEREOF AND DISPLAY SUBSTRATE
The abstract describes a light emitting transistor and its method of manufacturing, as well as a display substrate. The transistor includes a gate electrode, an insulating layer, a first electrode with through holes, a light emitting functional layer, and a second electrode.
- Gate electrode on a base substrate
- Insulating layer on one side of the gate electrode
- First electrode with through holes arranged in groups
- Light emitting functional layer on one side of the first electrode
- Second electrode on the light emitting functional layer
Potential Applications: - Display technology - Lighting applications - Electronic devices
Problems Solved: - Efficient light emission - Improved transistor design - Enhanced display performance
Benefits: - Energy efficiency - Brighter displays - Compact design
Commercial Applications: Title: Advanced Light Emitting Transistor Technology for Displays This technology can be used in: - Smartphones - TVs - Monitors - Wearable devices
Questions about Light Emitting Transistors: 1. How does the design of this transistor improve display performance? 2. What are the key advantages of using a light emitting transistor in electronic devices?
Frequently Updated Research: - Ongoing studies on improving the efficiency of light emitting transistors - Research on integrating these transistors into flexible displays for future applications.
Original Abstract Submitted
a light emitting transistor, a method of manufacturing the same, and a display substrate are provided. the light emitting transistor includes: a gate electrode on a base substrate; an insulating layer on a side of the gate electrode away from the base substrate; a first electrode on a side of the insulating layer away from the base substrate, wherein the first electrode is provided with a plurality of through holes therein, which are divided into a plurality of through hole groups arranged side by side in a first direction; each through hole group includes multiple through holes arranged in a second direction, the first direction intersects the second direction; a light emitting functional layer on a side of the first electrode away from the base substrate; and a second electrode on a side of the light emitting functional layer away from the base substrate.
