Boe technology group co., ltd. (20240222445). THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND ARRAY SUBSTRATE simplified abstract
Contents
THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND ARRAY SUBSTRATE
Organization Name
boe technology group co., ltd.
Inventor(s)
THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND ARRAY SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222445 titled 'THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND ARRAY SUBSTRATE
The abstract describes a thin film transistor with multiple active layer structures that allow charges to be gathered on two surfaces of each active layer, multiplying the number of charges gathered and increasing the open state current of the transistor.
- Thin film transistor with multiple active layer structures
- Charges gathered on two surfaces of each active layer
- Increased number of charges gathered
- Enhanced open state current of the transistor
Potential Applications: - Display technology - Integrated circuits - Electronic devices
Problems Solved: - Improved charge gathering efficiency - Enhanced transistor performance
Benefits: - Higher open state current - Increased efficiency in electronic devices
Commercial Applications: Title: Enhanced Thin Film Transistor Technology for Advanced Displays and Integrated Circuits This technology can be used in the development of high-performance displays, integrated circuits, and electronic devices, leading to improved functionality and efficiency in various industries.
Questions about Thin Film Transistor Technology: 1. How does the multiple active layer structure improve the performance of the thin film transistor?
The multiple active layer structure allows charges to be gathered on two surfaces of each active layer, increasing the number of charges gathered and enhancing the open state current of the transistor.
2. What are the potential applications of thin film transistor technology in the electronics industry?
Thin film transistor technology can be applied in display technology, integrated circuits, and various electronic devices to improve performance and efficiency.
Original Abstract Submitted
a thin film transistor, an array substrate and a manufacturing method of the thin film transistor are provided, the thin film transistor includes a base substrate; and a first active layer, a first insulating layer and a second active layer, which are sequentially arranged on the base substrate, the first active layer is in contact with the second active layer through a first via hole structure located in the first insulating layer, and non-contacted portions of the first active layer and the second active layer are separated by the first insulating layer, the thin film transistor has a plurality of active layer structures, so that the charges are gathered on two surfaces of each of the active layers, and the number of the charges gathered on the surfaces of the active layers is multiplied, and the open state current of the thin film transistor is multiplied.
