Boe technology group co., ltd. (20240213373). FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME, AND DISPLAY PANEL simplified abstract
Contents
FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME, AND DISPLAY PANEL
Organization Name
boe technology group co., ltd.
Inventor(s)
FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME, AND DISPLAY PANEL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240213373 titled 'FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME, AND DISPLAY PANEL
The present disclosure introduces a field-effect transistor and a method for its manufacturing, along with a display panel, within the display technologies field. The transistor comprises a substrate, an active layer, a source, a drain, a first insulating layer, and an oxygenating layer. By overlapping the orthographic projection of the oxygenating layer with the target region of the active layer on the substrate, oxygen elements from the process environment can diffuse to the active layer, reducing oxygen vacancies and enhancing the uniformity and stability of the transistor.
- The field-effect transistor includes a unique oxygenating layer that improves the performance by reducing oxygen vacancies in the active layer.
- The method involves strategically placing the oxygenating layer to allow oxygen elements to diffuse to the target region of the active layer.
- The innovation enhances the uniformity and stability of the active layer, resulting in an improved field-effect transistor performance.
- By reducing oxygen vacancies, the transistor's overall efficiency and reliability are increased.
- The technology offers a novel approach to transistor design, optimizing oxygen diffusion for enhanced functionality.
Potential Applications: This technology can be applied in various display panels, electronic devices, and semiconductor industries where field-effect transistors are utilized.
Problems Solved: The innovation addresses the issue of oxygen vacancies in the active layer of field-effect transistors, improving their performance and reliability.
Benefits: Enhanced uniformity and stability of the active layer, improved transistor performance, increased efficiency, and reliability.
Commercial Applications: This technology has significant commercial potential in the display panel manufacturing industry, semiconductor sector, and electronic device production.
Questions about the Technology: 1. How does the oxygenating layer in the field-effect transistor improve its performance? 2. What are the potential applications of this technology beyond display panels and electronic devices?
Original Abstract Submitted
the present disclosure provides a field effect transistor and a method for manufacturing the same, and a display panel, relating to the field of display technologies. the field effect transistor includes a substrate, an active layer, a source, a drain, a first insulating layer and an oxygenating layer. an orthographic projection of the oxygenating layer on the substrate is overlapped with an orthographic projection of a target region of the active layer on the substrate. therefore, when the oxygenating layer is prepared, oxygen elements in the process environment can diffuse to the target region of the active layer, to oxygenate the active layer. in this way, oxygen vacancies in the active layer can be reduced, and the uniformity and stability of the active layer is improved, thereby further improving the performance of the field effect transistor.
