Boe technology group co., ltd. (20240204004). THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND DISPLAY SUBSTRATE simplified abstract

THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND DISPLAY SUBSTRATE

Organization Name

boe technology group co., ltd.

Inventor(s)

Hehe Hu of Beijing (CN)

Yan Qu of Beijing (CN)

Jiayu He of Beijing (CN)

Kun Zhao of Beijing (CN)

Jie Huang of Beijing (CN)

Zhengliang Li of Beijing (CN)

Ce Ning of Beijing (CN)

Dongfang Wang of Beijing (CN)

Fengjuan Liu of Beijing (CN)

Nianqi Yao of Beijing (CN)

Feifei Li of Beijing (CN)

Shunhang Zhang of Beijing (CN)

Yunsik Im of Beijing (CN)

Liping Lei of Beijing (CN)

THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND DISPLAY SUBSTRATE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240204004 titled 'THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND DISPLAY SUBSTRATE

Simplified Explanation

The patent application describes a thin-film transistor and its manufacturing method, as well as a display substrate. The thin-film transistor aims to improve illumination stability without reducing substrate transmittance.

• The thin-film transistor includes a base substrate, a gate electrode, an active layer, and first and second electrodes.
• The active layer overlaps with the gate electrode and includes a channel region perpendicular to the gate electrode's extending direction.
• This design enhances the illumination stability of the transistor.

Key Features and Innovation

• Thin-film transistor design for improved illumination stability.
• Active layer with a channel region perpendicular to the gate electrode.
• First and second electrodes for efficient transistor operation.

Potential Applications

The technology can be used in various display applications, such as LCD screens, OLED displays, and electronic signage.

Problems Solved

• Improved illumination stability in thin-film transistors.
• Enhanced performance without reducing substrate transmittance.

Benefits

• Better display quality in electronic devices.
• Increased efficiency and reliability in thin-film transistors.

Commercial Applications

Potential commercial applications include consumer electronics, digital signage, and display panels for various industries.

Prior Art

For prior art related to this technology, researchers can explore patents and publications in the field of thin-film transistors and display technologies.

Frequently Updated Research

Researchers are continuously exploring ways to enhance thin-film transistor performance and display quality. Stay updated on the latest advancements in this field.

Questions about Thin-Film Transistors

How does the design of the active layer contribute to improved illumination stability?

The active layer's channel region perpendicular to the gate electrode helps enhance the transistor's performance and stability.

What are the potential commercial applications of this technology beyond display substrates?

This technology can also be applied in sensors, wearable devices, and other electronic components for improved performance and efficiency.

Original Abstract Submitted

provided are a thin-film transistor and a manufacturing method thereof, and a display substrate, belonging to the technical field of thin-film transistors. the thin-film transistor includes: a base substrate; a gate electrode on the base substrate; an active layer on a side of the gate electrode away from the base substrate, an orthographic projection of the active layer onto the base substrate overlapping with an orthographic projection of the gate electrode onto the base substrate; and a first electrode and a second electrode on a side of the active layer away from the base substrate, the first electrode being one of a source electrode and a drain electrode, and the second electrode being the other of the source electrode and the drain electrode. specifically the active layer includes a channel region corresponding to a gap between the first electrode and the second electrode, and a width direction of the channel region is perpendicular or substantially perpendicular to an extending direction of the gate electrode. according to the embodiments of the present disclosure, the illumination stability of the thin-film transistor can be improved without reducing the transmittance of the substrate.