Boe technology group co., ltd. (20240186379). METAL-OXIDE THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, X-RAY DETECTOR, AND DISPLAY PANEL simplified abstract
Contents
- 1 METAL-OXIDE THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, X-RAY DETECTOR, AND DISPLAY PANEL
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METAL-OXIDE THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, X-RAY DETECTOR, AND DISPLAY PANEL - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METAL-OXIDE THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, X-RAY DETECTOR, AND DISPLAY PANEL
Organization Name
boe technology group co., ltd.
Inventor(s)
METAL-OXIDE THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, X-RAY DETECTOR, AND DISPLAY PANEL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240186379 titled 'METAL-OXIDE THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, X-RAY DETECTOR, AND DISPLAY PANEL
Simplified Explanation
The method described in the abstract involves manufacturing a metal-oxide thin-film transistor (TFT) by forming an active layer with a metal oxide semiconductor on a base substrate, and laminating a functional layer containing a lanthanide element on the active layer. The active layer and functional layer are then annealed to allow diffusion of the lanthanide element into the active layer.
- Forming an active layer with a metal oxide semiconductor on a base substrate.
- Laminating a functional layer containing a lanthanide element on the active layer.
- Annealing the active layer and functional layer to allow diffusion of the lanthanide element into the active layer.
Potential Applications
The technology can be applied in the manufacturing of electronic devices such as displays, sensors, and integrated circuits.
Problems Solved
This method provides a way to enhance the performance and efficiency of metal-oxide thin-film transistors by incorporating lanthanide elements into the active layer.
Benefits
- Improved performance of metal-oxide thin-film transistors. - Enhanced efficiency of electronic devices. - Potential cost savings in manufacturing processes.
Potential Commercial Applications
Optimizing Metal-Oxide Thin-Film Transistors for Enhanced Electronic Devices
Possible Prior Art
There may be prior art related to the use of lanthanide elements in thin-film transistors or semiconductor devices, but specific examples are not provided in the abstract.
Unanswered Questions
== How does the diffusion of lanthanide elements into the active layer impact the electrical properties of the metal-oxide thin-film transistor? The article does not delve into the specific changes in electrical properties resulting from the diffusion of lanthanide elements, leaving room for further research and experimentation in this area.
== Are there any potential challenges or limitations in the manufacturing process of metal-oxide thin-film transistors using this method? The abstract does not address any challenges or limitations that may arise during the manufacturing process, which could be important factors to consider for practical implementation of this technology.
Original Abstract Submitted
provided is a method for manufacturing a metal-oxide thin-film transistor (tft). the method includes: forming, on a base substrate, an active layer including a metal oxide semiconductor, and a functional layer laminated on the active layer and containing a lanthanide element; and annealing the active layer and the functional layer, such that the lanthanide element in the functional layer is diffused into the active layer.
