Boe technology group co., ltd. (20240162138). METHOD FOR FORMING CONDUCTIVE VIA, CONDUCTIVE VIA AND PASSIVE DEVICE simplified abstract

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METHOD FOR FORMING CONDUCTIVE VIA, CONDUCTIVE VIA AND PASSIVE DEVICE

Organization Name

boe technology group co., ltd.

Inventor(s)

Xiyuan Wang of Beijing (CN)

Feng Qu of Beijing (CN)

METHOD FOR FORMING CONDUCTIVE VIA, CONDUCTIVE VIA AND PASSIVE DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240162138 titled 'METHOD FOR FORMING CONDUCTIVE VIA, CONDUCTIVE VIA AND PASSIVE DEVICE

Simplified Explanation

The present disclosure provides a method for forming a conductive via in electronic elements. The method includes preparing a dielectric layer, forming a connection via through the dielectric layer, and forming connection and extraction electrodes.

  • Preparing a dielectric layer
  • Forming a connection via through the dielectric layer
  • Forming connection and extraction electrodes
  • Connection electrode covers inner wall of via
  • First and second extraction electrodes are electrically connected to connection electrode

Potential Applications

The technology can be applied in the manufacturing of electronic devices, such as integrated circuits, PCBs, and other electronic components requiring conductive vias.

Problems Solved

The method solves the problem of efficiently forming a conductive via through a dielectric layer, allowing for improved connectivity in electronic elements.

Benefits

  • Enhanced electrical connectivity
  • Improved performance of electronic devices
  • Cost-effective manufacturing process

Potential Commercial Applications

  • Semiconductor industry
  • Electronics manufacturing companies
  • Research and development organizations

Possible Prior Art

One possible prior art could be the traditional methods of forming conductive vias in electronic elements, which may involve complex processes and may not be as efficient as the method disclosed in this patent application.

Unanswered Questions

1. What specific materials are recommended for the dielectric layer in this method? 2. Are there any limitations to the size or thickness of the conductive vias that can be formed using this method?


Original Abstract Submitted

the present disclosure provides a method for forming a conductive via, and belongs to the technical field of electronic elements. the present method includes: preparing a dielectric layer, and forming a connection via, which extends through the dielectric layer in a thickness direction of the dielectric layer, in the dielectric layer; wherein the dielectric layer includes a first surface and a second surface oppositely arranged in the thickness direction of the dielectric layer; forming a connection electrode in the connection via, forming a first extraction electrode on the first surface, and forming a second extraction electrode on the second surface; wherein the connection electrode at least covers an inner wall of the connection via, and the first extraction electrode and the second extraction electrode are electrically connected to the connection electrode.