Applied materials, inc. (20240339318). SEGMENTED FORMATION OF GATE INTERFACE simplified abstract
Contents
SEGMENTED FORMATION OF GATE INTERFACE
Organization Name
Inventor(s)
Steven C. H. Hung of Sunnyvale CA (US)
Theresa Kramer Guarini of San Jose CA (US)
Johanes F. Swenberg of Los Gatos CA (US)
SEGMENTED FORMATION OF GATE INTERFACE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339318 titled 'SEGMENTED FORMATION OF GATE INTERFACE
The method described in the abstract involves depositing high-k dielectric layers on a substrate, forming an interfacial layer, inserting nitrogen atoms, and passivating chemical bonds through various processes.
- First deposition process to deposit a first high-k dielectric layer
- Interface formation process to form an interfacial layer
- Second deposition process to deposit a second high-k dielectric layer
- Plasma nitridation process to insert nitrogen atoms
- Anneal process to passivate chemical bonds
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Nanotechnology research
Problems Solved: - Enhancing dielectric properties - Improving device performance - Increasing reliability of semiconductor structures
Benefits: - Higher efficiency in semiconductor devices - Enhanced electrical properties - Improved overall performance
Commercial Applications: Title: Advanced Semiconductor Structure Formation Technology This technology can be utilized in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.
Questions about Semiconductor Structure Formation: 1. How does the insertion of nitrogen atoms impact the properties of the high-k dielectric layers?
- The insertion of nitrogen atoms helps improve the dielectric properties and stability of the layers.
2. What are the key advantages of using high-k dielectric layers in semiconductor structures?
- High-k dielectric layers offer higher capacitance and lower leakage compared to traditional materials.
Original Abstract Submitted
a method of forming a semiconductor structure includes performing a first deposition process to deposit a first high-k dielectric layer on a surface of a substrate, performing an interface formation process to form an interfacial layer on the surface of the substrate, performing a second deposition process to deposit a second high-k dielectric layer on the interfacial layer, performing a plasma nitridation process to insert nitrogen atoms in the first high-k dielectric layer and the second high-k dielectric layer, and performing an anneal process to passivate chemical bonds in the first high-k dielectric layer and the second high-k dielectric layer.
