Applied materials, inc. (20240339316). PROCESSES FOR DEPOSITING SIB FILMS simplified abstract
Contents
PROCESSES FOR DEPOSITING SIB FILMS
Organization Name
Inventor(s)
Aykut Aydin of Sunnyvale CA (US)
Rui Cheng of Santa Clara CA (US)
Karthik Janakiraman of San Jose CA (US)
Abhijit Basu Mallick of Fremont CA (US)
Takehito Koshizawa of San Jose CA (US)
PROCESSES FOR DEPOSITING SIB FILMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339316 titled 'PROCESSES FOR DEPOSITING SIB FILMS
The abstract of this patent application describes a process for forming silicon- and boron-containing films for spacer-defined patterning applications.
- The process involves flowing a silicon-containing species with a higher molecular weight than SiH into a processing chamber, along with a boron-containing species, to deposit a conformal film on patterned features on a substrate.
- This innovative process allows for the precise deposition of silicon and boron-containing films on patterned features, enabling advanced spacer-defined patterning techniques.
Potential Applications:
- This technology can be used in semiconductor manufacturing for advanced patterning applications, such as creating high-density integrated circuits with precise feature sizes.
- It can also be applied in the production of microelectromechanical systems (MEMS) and other nanoscale devices that require intricate patterning processes.
Problems Solved:
- This process addresses the need for precise and uniform deposition of silicon- and boron-containing films on patterned features, which is crucial for achieving high-resolution patterning in semiconductor devices.
Benefits:
- Improved control over film deposition results in enhanced device performance and reliability.
- Enables the production of smaller and more complex semiconductor devices with higher levels of integration.
Commercial Applications:
- This technology has significant commercial potential in the semiconductor industry, where precise patterning processes are essential for developing cutting-edge electronic devices.
- It can also be valuable in research and development settings for exploring new applications of advanced patterning techniques.
Questions about the technology: 1. How does the molecular weight of the silicon-containing species impact the film deposition process? 2. What are the key advantages of using boron-containing species in conjunction with silicon for film deposition in semiconductor manufacturing?
Original Abstract Submitted
embodiments of the present disclosure generally relate to processes for forming silicon- and boron-containing films for use in, e.g., spacer-defined patterning applications. in an embodiment, a spacer-defined patterning process is provided. the process includes disposing a substrate in a processing volume of a processing chamber, the substrate having patterned features formed thereon, and flowing a first process gas into the processing volume, the first process gas comprising a silicon-containing species, the silicon-containing species having a higher molecular weight than sih. the process further includes flowing a second process gas into the processing volume, the second process gas comprising a boron-containing species, and depositing, under deposition conditions, a conformal film on the patterned features, the conformal film comprising silicon and boron.
