Applied materials, inc. (20240304671). Methods For Forming Gate Structures simplified abstract
Contents
Methods For Forming Gate Structures
Organization Name
Inventor(s)
Nicolas Louis Breil of San Jose CA (US)
Balasubramanian Pranatharthiharan of San Jose CA (US)
Methods For Forming Gate Structures - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240304671 titled 'Methods For Forming Gate Structures
The method described in the abstract involves using epitaxial growth to form the layers of a gate structure. This process includes growing silicon germanium layers with varying germanium percentages on a silicon substrate, as well as selectively etching and depositing materials to create the desired structure.
- Epitaxial growth is used to form the layers of the gate structure
- Silicon germanium layers with different germanium percentages are grown on a silicon substrate
- Selective etching and deposition techniques are employed to create the desired structure
- Low-k dielectric material is selectively deposited to fill a recess in the structure
- The second silicon germanium layer is selectively oxidized to form a silicon germanium oxide layer
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Nanotechnology research
Problems Solved: - Enhancing the performance and efficiency of gate structures - Improving the reliability and durability of semiconductor devices
Benefits: - Increased speed and functionality of electronic devices - Reduced power consumption and heat generation - Enhanced overall performance of integrated circuits
Commercial Applications: Title: Advanced Gate Structure Formation Method for Semiconductor Devices This technology could be utilized in the production of high-performance electronic devices, leading to improved market competitiveness and customer satisfaction in the semiconductor industry.
Prior Art: Researchers and engineers in the field of semiconductor manufacturing may find relevant information in prior studies on epitaxial growth techniques, gate structure formation, and materials science related to silicon germanium compounds.
Frequently Updated Research: Ongoing research in materials science, semiconductor physics, and nanotechnology may provide new insights and advancements in epitaxial growth methods for gate structures in semiconductor devices.
Questions about Gate Structure Formation Method: 1. How does epitaxial growth contribute to the formation of advanced gate structures in semiconductor devices? 2. What are the key advantages of using silicon germanium layers with varying germanium percentages in the fabrication of gate structures?
Original Abstract Submitted
a method for forming a gate structure uses epitaxial growth to form the layers of the gate structure. the method includes epitaxially growing a first silicon germanium layer with a first germanium percentage on a silicon substrate, growing a first silicon layer on the first silicon germanium layer, growing a second silicon germanium layer with a second germanium percentage greater than the first germanium percentage, growing a second silicon layer on the second silicon germanium layer, selectively etching a portion of the first silicon germanium layer to form a recess; selectively depositing a low-k dielectric material to fill the recess, and selectively oxidizing the second silicon germanium layer throughout to form a silicon germanium oxide layer.
