Applied materials, inc. (20240268095). 4F2 DRAM Including Buried Bitline simplified abstract
Contents
4F2 DRAM Including Buried Bitline
Organization Name
Inventor(s)
Qintao Zhang of Mt Kisco NY (US)
Sipeng Gu of Clifton Park NY (US)
4F2 DRAM Including Buried Bitline - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240268095 titled '4F2 DRAM Including Buried Bitline
The patent application describes methods for creating 4F vertical DRAM devices with buried bitlines.
- Plurality of bitlines are situated between vertical structures on a substrate.
- Bottom source/drain is formed in each vertical structure in a saddle area, which includes a saddle trench through the vertical structures.
- A dielectric film covers the vertical structures in the saddle area, running along a portion of the bitlines and just the first sidewall of the vertical structures.
- Fill material is placed over the vertical structures in the saddle area, making direct contact with the bitlines.
Potential Applications: - Memory storage devices - Semiconductor manufacturing - Electronics industry
Problems Solved: - Efficient use of space in vertical DRAM devices - Enhanced performance and reliability of memory storage
Benefits: - Increased data storage capacity - Improved data transfer speeds - Enhanced device durability
Commercial Applications: Vertical DRAM devices with buried bitlines could revolutionize the memory storage industry by offering higher capacity and faster data transfer speeds in a more compact design.
Questions about Vertical DRAM Devices with Buried Bitlines: 1. How do these devices compare to traditional DRAM devices in terms of performance and efficiency? 2. What are the potential challenges in mass-producing these innovative DRAM devices?
Original Abstract Submitted
disclosed are approaches for forming 4fvertical dram devices including buried bitlines. one dram device may include a plurality of bitlines between a plurality of vertical structures extending from a substrate, and a bottom source/drain formed in each of the plurality of vertical structures in a saddle area, wherein the saddle area comprises a saddle trench formed through the plurality of vertical structures. the dram device may further include a dielectric film formed over the plurality of vertical structures in the saddle area, wherein the dielectric film is present along a portion of the plurality of bitlines and along just a first sidewall the plurality of vertical structures in the saddle area, and a fill material over the plurality of vertical structures of the saddle area, wherein the fill material directly contacts the plurality of bitlines.
