Applied materials, inc. (20240266319). Method of Multi-layer Die Stacking with Die-to-Wafer Bonding simplified abstract
Contents
Method of Multi-layer Die Stacking with Die-to-Wafer Bonding
Organization Name
Inventor(s)
Guan Huei See of Singapore (SG)
Arvind Sundarrajan of Singapore (SG)
Method of Multi-layer Die Stacking with Die-to-Wafer Bonding - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240266319 titled 'Method of Multi-layer Die Stacking with Die-to-Wafer Bonding
Simplified Explanation: The patent application describes a method of die stacking with die-to-wafer bonding, involving bonding dies to a substrate, thinning the dies, passivating them, filling gaps with a fill material, and forming conductive vias.
- Bonding multiple dies to a substrate using a hybrid bonding process.
- Thinning the bonded dies through a selective silicon thinning process.
- Passivating the thinned dies for protection.
- Filling gaps between thinned dies with a fill material to create a layer.
- Creating conductive vias through the layer to the substrate.
Potential Applications: This technology can be applied in semiconductor manufacturing, integrated circuit packaging, and microelectronics industries for creating compact and high-performance electronic devices.
Problems Solved: This method addresses the challenges of achieving high-density packaging, improving thermal performance, and enhancing electrical connectivity in stacked die configurations.
Benefits: The benefits of this method include increased device integration, improved signal transmission, enhanced thermal dissipation, and overall miniaturization of electronic systems.
Commercial Applications: The technology can be utilized in the production of advanced smartphones, tablets, wearables, IoT devices, and other compact electronic gadgets requiring efficient die stacking solutions.
Prior Art: Readers interested in prior art related to die stacking methods with die-to-wafer bonding can explore research papers, patents, and industry publications on semiconductor packaging technologies.
Frequently Updated Research: Stay updated on the latest advancements in die stacking techniques, hybrid bonding processes, and semiconductor packaging innovations to enhance your understanding of this technology.
Questions about Die Stacking with Die-to-Wafer Bonding: 1. How does die-to-wafer bonding differ from other die stacking methods? 2. What are the key considerations for selecting the fill material in die stacking processes?
By addressing these questions, readers can gain a deeper insight into the intricacies of die stacking with die-to-wafer bonding and its applications in the semiconductor industry.
Original Abstract Submitted
embodiments of methods of die stacking are provided herein. in some embodiments, a method of die stacking with die-to-wafer bonding includes: bonding a plurality of first dies to a substrate via a hybrid bonding process; performing a selective silicon (si) thinning process to reduce a thickness of the plurality of first dies that are bonded to form a plurality of thinned first dies; passivating the plurality of thinned first dies to form a plurality of passivated thinned first dies to protect the plurality of thinned first dies; filling gaps between adjacent dies of the plurality of thinned first dies with a first fill material, wherein the plurality of passivated thinned first dies and the first fill material together form a first layer; and forming a plurality of first conductive vias through the first layer to the substrate.
