Applied materials, inc. (20240266215). LOW STRESS TUNGSTEN LAYER DEPOSITION simplified abstract
Contents
LOW STRESS TUNGSTEN LAYER DEPOSITION
Organization Name
Inventor(s)
Mehran Behdjat of Santa Clara CA (US)
Jallepally Ravi of San Ramon CA (US)
LOW STRESS TUNGSTEN LAYER DEPOSITION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240266215 titled 'LOW STRESS TUNGSTEN LAYER DEPOSITION
Simplified Explanation:
The patent application describes a method of forming a structure on a substrate by creating a nucleation layer, passivation layer, and tungsten fill layer within an opening on the substrate using specific treatment cycles.
- The method involves forming a nucleation layer within the substrate's opening.
- A passivation layer is then formed on the nucleation layer using radical treatment.
- A tungsten fill layer is created within the opening over the passivation layer and nucleation layer through multiple treatment cycles.
- Each treatment cycle includes pulsing a first gas, flowing a second gas, and purging the gases to form the tungsten fill layer.
Key Features and Innovation:
- Formation of nucleation, passivation, and tungsten fill layers within a substrate's opening.
- Use of radical treatment to create the passivation layer.
- Implementation of treatment cycles involving specific gas pulsing, flowing, and purging steps.
Potential Applications:
The technology can be applied in semiconductor manufacturing, microelectronics, and nanotechnology industries for creating precise structures on substrates.
Problems Solved:
The method addresses the challenge of forming complex structures on substrates with high precision and reliability.
Benefits:
- Enhanced control over structure formation.
- Improved adhesion and uniformity of layers.
- Increased efficiency in substrate processing.
Commercial Applications:
The technology can be utilized in the production of advanced electronic devices, sensors, and integrated circuits, leading to improved performance and reliability in various electronic applications.
Questions about the Technology: 1. How does the radical treatment contribute to the formation of the passivation layer? 2. What are the advantages of using treatment cycles in creating the tungsten fill layer?
Frequently Updated Research:
Ongoing research focuses on optimizing treatment parameters and exploring new materials for layer formation in substrate structures.
Original Abstract Submitted
a method of forming a structure on a substrate, includes forming a nucleation layer within an opening of the substrate within a processing chamber. the method further includes forming a passivation layer on at least a portion of the nucleation layer by introducing radical treatment into the processing chamber. the method further includes forming a tungsten fill layer within the opening over the passivation layer and the nucleation layer, wherein the tungsten fill layer is formed by a plurality of treatment cycles. each treatment cycle includes pulsing a first gas at the substrate for a pulse time duration while concurrently flowing a second gas over the substrate, and purging the first gas and the second gas by flowing a purge gas over the substrate for a purge time duration.
