Applied materials, inc. (20240266163). TREATMENTS TO ENHANCE MATERIAL STRUCTURES simplified abstract
Contents
TREATMENTS TO ENHANCE MATERIAL STRUCTURES
Organization Name
Inventor(s)
Srinivas Gandikota of Santa Clara CA (US)
Yixiong Yang of San Jose CA (US)
Jacqueline Samantha Wrench of Santa Clara CA (US)
Yong Yang of Mountain View CA (US)
Steven C. H. Hung of Sunnyvale CA (US)
TREATMENTS TO ENHANCE MATERIAL STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240266163 titled 'TREATMENTS TO ENHANCE MATERIAL STRUCTURES
The method described in the abstract involves forming a high-dielectric cap layer on a semiconductor structure by depositing the high-dielectric cap layer, followed by depositing a sacrificial silicon cap layer, performing a post cap anneal process, and finally removing the sacrificial silicon cap layer.
- Deposit high-dielectric cap layer on semiconductor structure
- Deposit sacrificial silicon cap layer on high-dielectric cap layer
- Perform post cap anneal process to harden and densify the high-dielectric cap layer
- Remove sacrificial silicon cap layer
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Electronic device production
Problems Solved: - Enhancing the performance and reliability of semiconductor devices - Improving the quality of high-dielectric cap layers - Simplifying the process of forming cap layers on semiconductor structures
Benefits: - Increased efficiency in semiconductor manufacturing - Enhanced functionality of electronic devices - Improved overall performance of integrated circuits
Commercial Applications: Title: Advanced Semiconductor Manufacturing Process for Enhanced Device Performance This technology can be utilized in the production of various electronic devices such as smartphones, computers, and other consumer electronics. It can also benefit industries involved in semiconductor manufacturing and integrated circuit production.
Questions about the technology: 1. How does the sacrificial silicon cap layer contribute to the overall process? 2. What are the specific advantages of using a high-dielectric cap layer in semiconductor structures?
Original Abstract Submitted
a method of forming a high-� dielectric cap layer on a semiconductor structure formed on a substrate includes depositing the high-� dielectric cap layer on the semiconductor structure, depositing a sacrificial silicon cap layer on the high-� dielectric cap layer, performing a post cap anneal process to harden and densify the as-deposited high-� dielectric cap layer, and removing the sacrificial silicon cap layer.
