Applied materials, inc. (20240258161). METHODS OF FORMING INTERCONNECT STRUCTURES simplified abstract
Contents
METHODS OF FORMING INTERCONNECT STRUCTURES
Organization Name
Inventor(s)
Yong Jin Kim of Albany CA (US)
Carmen Leal Cervantes of Mountain View CA (US)
Kevin Kashefi of San Ramon CA (US)
Xingye Wang of Gilbert AZ (US)
METHODS OF FORMING INTERCONNECT STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240258161 titled 'METHODS OF FORMING INTERCONNECT STRUCTURES
The patent application describes a method of forming devices by creating a dielectric layer on a substrate with at least one feature defining a gap, including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap to resist degradation when exposed to the ambient atmosphere. A barrier layer is selectively deposited on the sidewalls but not on the bottom of the gap. The SAM is removed after the barrier layer is deposited on the sidewalls.
- Dielectric layer formed on substrate with gap
- Self-assembled monolayer (SAM) on gap bottom resists degradation
- Barrier layer selectively deposited on sidewalls
- SAM removed after barrier layer deposition
Potential Applications: - Semiconductor manufacturing - Microelectronics - Nanotechnology
Problems Solved: - Preventing degradation of dielectric layers - Enhancing device performance - Improving device reliability
Benefits: - Increased device lifespan - Enhanced device functionality - Improved device efficiency
Commercial Applications: Title: Advanced Dielectric Layer Formation Technology This technology can be used in the production of various electronic devices, such as microchips, sensors, and transistors. It has the potential to revolutionize the semiconductor industry by improving the performance and reliability of electronic components.
Questions about Dielectric Layer Formation Technology: 1. How does the SAM help prevent degradation of the dielectric layer? The SAM acts as a protective barrier on the bottom of the gap, shielding it from environmental factors that could cause degradation. 2. What are the key advantages of selectively depositing the barrier layer on the sidewalls? Selective deposition ensures that the barrier layer only covers the necessary areas, reducing material waste and improving the overall efficiency of the process.
Original Abstract Submitted
methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. a self-assembled monolayer (sam) is formed on the bottom of the gap which resists degradation when exposed to the ambient atmosphere. a barrier layer is selectively deposited on the sidewalls but not on the bottom of the gap. the sam is removed after selectively depositing the barrier layer on the sidewalls.
