Applied materials, inc. (20240254645). LOW TEMPERATURE HYBRID BONDING METALLIZATION simplified abstract
Contents
LOW TEMPERATURE HYBRID BONDING METALLIZATION
Organization Name
Inventor(s)
John Klocke of Kalispell MT (US)
LOW TEMPERATURE HYBRID BONDING METALLIZATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240254645 titled 'LOW TEMPERATURE HYBRID BONDING METALLIZATION
The semiconductor wafer described in the patent application consists of a substrate with at least one via formed in it, with copper electroplating inside the via. The copper electroplating includes a first layer of nanotwin copper and a second layer of bulk copper.
- The semiconductor wafer includes a substrate with vias for improved electrical connections.
- Copper electroplating is used inside the vias, enhancing conductivity.
- The use of nanotwin copper in the first layer improves the performance of the wafer.
- The second layer of bulk copper provides additional conductivity and structural support.
- This innovation aims to enhance the efficiency and reliability of semiconductor devices.
Potential Applications: - Semiconductor manufacturing - Electronics industry - Telecommunications
Problems Solved: - Improved electrical connections - Enhanced conductivity - Structural support for semiconductor devices
Benefits: - Increased performance of semiconductor wafers - Enhanced reliability of electronic devices - Improved efficiency in electrical connections
Commercial Applications: Title: Enhanced Semiconductor Wafers for Improved Electrical Connections This technology can be utilized in the semiconductor manufacturing industry to produce more efficient and reliable electronic devices. It has the potential to impact various sectors such as telecommunications, consumer electronics, and industrial automation.
Questions about the technology: 1. How does the use of nanotwin copper in the first layer improve the performance of the semiconductor wafer? 2. What are the potential commercial applications of this technology in the electronics industry?
Original Abstract Submitted
a semiconductor wafer, including a substrate, at least one via formed in the substrate, and copper electroplating inside the at least one via, where the copper electroplating comprises a first layer of nanotwin copper, and a second layer of bulk copper. further, a method of making a semiconductor wafer, the method comprising providing a substrate; etching the substrate to form at least one via; and depositing copper electroplating inside the at least one via, wherein the copper electroplating comprises a first layer of nanotwin copper, and a second layer of bulk copper.
