Apple inc. (20240250211). Regrowth Structures for Micro LED simplified abstract
Contents
Regrowth Structures for Micro LED
Organization Name
Inventor(s)
Erin C. Young of Mountain View CA (US)
Ling Zhang of Saratoga CA (US)
David P. Bour of Cupertino CA (US)
Regrowth Structures for Micro LED - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240250211 titled 'Regrowth Structures for Micro LED
Simplified Explanation: The patent application describes light-emitting diodes with regrown semiconductor layers and methods of manufacture. In one embodiment, the LED includes a base structure with a first cladding layer doped with a first dopant type and a mesa pillar with an active layer protruding from the step surface, along with a regrown second cladding layer in direct contact with the mesa pillar.
- The LED includes a base structure with a first cladding layer doped with a first dopant type.
- A mesa pillar protrudes from the step surface of the base structure.
- The mesa pillar includes an active layer.
- A regrown second cladding layer doped with a second dopant type is in direct contact with the mesa pillar, spanning its bottom surface and sidewalls.
Potential Applications: 1. LED lighting systems for various applications. 2. Display technology for electronic devices. 3. Signage and advertising displays. 4. Automotive lighting solutions. 5. Medical devices and equipment.
Problems Solved: 1. Enhanced efficiency and performance of light-emitting diodes. 2. Improved light output and color rendering. 3. Simplified manufacturing processes for LEDs. 4. Better control over the emission properties of the diodes. 5. Increased durability and reliability of LED products.
Benefits: 1. Energy-efficient lighting solutions. 2. Brighter and more vibrant light output. 3. Customizable emission properties for specific applications. 4. Longer lifespan and reduced maintenance costs. 5. Environmentally friendly technology with lower power consumption.
Commercial Applications: Light-emitting diodes with regrown semiconductor layers can be used in a wide range of commercial applications, including lighting fixtures, electronic displays, automotive lighting, and medical devices. The technology offers improved efficiency, performance, and customization options, making it attractive for various industries.
Questions about Light-Emitting Diodes with Regrown Semiconductor Layers: 1. How do regrown semiconductor layers enhance the performance of light-emitting diodes? 2. What are the key differences between LEDs with regrown semiconductor layers and traditional LEDs?
Original Abstract Submitted
light emitting diodes with regrown semiconductor layers and methods of manufacture are described. in an embodiment, a light emitting diode includes a base structure including a first cladding layer doped with a first dopant type (e.g. n-type) and step surface. a mesa pillar including an active layer protrudes from the step surface, and a regrown second cladding layer doped with a second dopant type (e.g. p-type) is in direct contact with and spans a bottom surface and sidewalls of the mesa pillar and the step surface.
