Apple inc. (20240105626). Semiconductor Package with Local Interconnect and Chiplet Integration simplified abstract
Contents
- 1 Semiconductor Package with Local Interconnect and Chiplet Integration
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Semiconductor Package with Local Interconnect and Chiplet Integration - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Semiconductor Package with Local Interconnect and Chiplet Integration
Organization Name
Inventor(s)
Sanjay Dabral of Cupertino CA (US)
Kunzhong Hu of Cupertino CA (US)
SivaChandra Jangam of Milpitas CA (US)
Zhitao Cao of Campbell CA (US)
Semiconductor Package with Local Interconnect and Chiplet Integration - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105626 titled 'Semiconductor Package with Local Interconnect and Chiplet Integration
Simplified Explanation
The patent application describes semiconductor packages with local interconnects and methods of fabrication. In one embodiment, the local interconnect includes cavities filled with a low-k material or air gap, with a metal wire spanning across the cavities to electrically connect different dies. Fanout can be used to create a wider bump pitch or connect core regions of the dies. Multiple local interconnects can be used to scale down electrostatic discharge.
- Local interconnects with cavities filled with low-k material or air gap
- Metal wire spanning across cavities to connect different dies
- Fanout for wider bump pitch or connecting core regions of dies
- Multiple local interconnects to scale down electrostatic discharge
Potential Applications
The technology can be applied in the semiconductor industry for advanced packaging solutions, enabling improved performance and reliability in integrated circuits.
Problems Solved
1. Enhanced electrical connectivity between different dies in semiconductor packages. 2. Reduction of electrostatic discharge through the use of multiple local interconnects.
Benefits
1. Improved signal integrity and reduced signal interference. 2. Increased reliability and performance of semiconductor devices. 3. Scalability for future advancements in semiconductor packaging technology.
Potential Commercial Applications
Optimizing local interconnects in semiconductor packages for high-performance computing applications.
Possible Prior Art
Previous methods of local interconnect fabrication in semiconductor packages may not have utilized cavities filled with low-k material or air gap for improved electrical connectivity.
Unanswered Questions
How does the technology impact overall package size and cost?
The abstract does not provide information on the potential effects of this technology on the size and cost of semiconductor packages. Further details on the scalability and cost implications would be beneficial for a comprehensive understanding.
What are the specific materials used for the low-k cavities in the local interconnects?
The abstract mentions the use of low-k materials or air gap in the cavities of the local interconnects, but does not specify the exact materials utilized. Understanding the specific materials can provide insights into the performance and reliability of the interconnects.
Original Abstract Submitted
semiconductor packages including local interconnects and methods of fabrication are described. in an embodiment, a local interconnect is fabricated with one or more cavities filled with a low-k material or air gap where a die-to-die routing path electrically connecting the first die and the second die includes the metal wire spanning across the one or more cavities. in other embodiments fanout can be utilized to create a wider bump pitch for the local interconnect, or for the local interconnect to connect core regions of the dies. multiple local interconnects can also be utilized to scale down electrostatic discharge.
