Advanced micro devices, inc. (20240113022). POWER VIA WITH REDUCED RESISTANCE simplified abstract
Contents
- 1 POWER VIA WITH REDUCED RESISTANCE
POWER VIA WITH REDUCED RESISTANCE
Organization Name
Inventor(s)
Richard T. Schultz of Fort Collins CO (US)
POWER VIA WITH REDUCED RESISTANCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113022 titled 'POWER VIA WITH REDUCED RESISTANCE
Simplified Explanation
The patent application describes an apparatus and method for efficiently routing power signals across a semiconductor die using through silicon vias (TSVs) and power rails. The integration of TSVs and power rails provides redundancy, increases charge sharing, improves wafer yield, and reduces voltage droop.
- Through silicon vias (TSVs) are used to route power signals across a semiconductor die.
- The integrated circuit includes a first micro TSV that connects to a backside metal layer and a second micro TSV that contacts at least one source region.
- A power rail connects the first micro TSV to the second micro TSV, replacing contacts with a second power rail such as the frontside metal zero (M0) layer.
- The power connection redundancy provided by the first power rail, second power rail, and backside metal layer improves performance and reliability of the semiconductor die.
Potential Applications
This technology can be applied in various semiconductor devices such as microprocessors, memory chips, and integrated circuits where efficient power routing is crucial.
Problems Solved
1. Efficient power signal routing across a semiconductor die. 2. Increasing charge sharing and improving wafer yield. 3. Reducing voltage droop in integrated circuits.
Benefits
1. Improved performance and reliability of semiconductor devices. 2. Enhanced power connection redundancy. 3. Increased efficiency in power signal routing.
Potential Commercial Applications
"Efficient Power Signal Routing Technology for Semiconductor Devices"
Possible Prior Art
There may be prior art related to power signal routing techniques using TSVs and power rails in semiconductor devices. Further research is needed to identify specific examples.
Unanswered Questions
How does this technology impact the overall power consumption of the semiconductor device?
The patent application focuses on the efficiency and reliability of power signal routing, but it does not directly address the impact on power consumption. Further analysis is needed to determine the effect on overall power usage.
Are there any limitations or drawbacks to using this technology in high-performance semiconductor devices?
While the patent application highlights the benefits of the proposed power routing method, it does not discuss any potential limitations or drawbacks. Additional research and testing may be necessary to identify any challenges associated with implementing this technology in high-performance semiconductor devices.
Original Abstract Submitted
an apparatus and method for efficiently routing power signals across a semiconductor die. in various implementations, an integrated circuit includes, at a first node that receives a power supply reference, a first micro through silicon via (tsv) that traverses through a silicon substrate layer to a backside metal layer. the integrated circuit includes, at a second node that receives the power supply reference, a second micro tsv that physically contacts at least one source region. the integrated circuit includes a first power rail that connects the first micro tsv to the second micro tsv. this power rail replaces contacts between the micro tsvs and a second power rail such as the frontside metal zero (m0) layer. each of the first power rail, the second power rail, and the backside metal layer provides power connection redundancy that increases charge sharing, improves wafer yield, and reduces voltage droop.
