20240047579. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seonhaeng Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240047579 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a substrate with opposing first and second surfaces. A device isolation layer extends through the substrate and defines an active region. A gate electrode is located on the first surface of the substrate, and a wiring structure connects the gate electrode and the active region. The active region consists of a target doped region and a path doped region. The target doped region, located between the device isolation layer and the gate electrode, contains a dopant with a high concentration. The path doped region, extending from the second surface of the substrate to the target doped region, contains a dopant with a lower concentration than the target doped region. Both the target and path doped regions are formed by implanting the dopant through the second surface of the substrate.
- The patent application describes a semiconductor device with a unique structure for the active region, consisting of a target doped region and a path doped region.
- The target doped region is located between the device isolation layer and the gate electrode, while the path doped region extends from the second surface of the substrate to the target doped region.
- The target doped region contains a dopant with a higher concentration than the path doped region.
- Both the target and path doped regions are formed by implanting the dopant through the second surface of the substrate.
Potential Applications
- This semiconductor device structure can be used in various electronic devices, such as integrated circuits, microprocessors, and memory chips.
- It can improve the performance and efficiency of these electronic devices by enhancing the conductivity and control of the active region.
Problems Solved
- The unique structure of the active region helps to prevent leakage currents and improve the overall performance of the semiconductor device.
- It provides better control over the flow of electrical current, reducing power consumption and improving energy efficiency.
- The device isolation layer helps to isolate the active region, preventing interference from neighboring components and improving the reliability of the device.
Benefits
- The semiconductor device with this structure offers improved performance, efficiency, and reliability compared to conventional devices.
- It allows for better control of electrical current, reducing power consumption and improving energy efficiency.
- The device isolation layer helps to prevent interference and improve the overall reliability of the device.
Original Abstract Submitted
a semiconductor device includes a substrate including first and second surfaces opposing each other. a device isolation layer extends through the substrate and defines an active region in the substrate. a gate electrode is on the first surface of the substrate. a wiring structure electrically connects the gate electrode and the active region. the active region includes a target doped region between the device isolation layer and the gate electrode and including a dopant having a first concentration. a path doped region is between the device isolation layer and the gate electrode and extends from the second surface of the substrate to the target doped region. the path doped region includes a dopant having a second concentration less than the first concentration. the target doped region and the path doped region are formed by implanting the dopant through the second surface of the substrate.
