20240046987. SEMICONDUCTOR DEVICE simplified abstract (Micron Technology, Inc.)

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SEMICONDUCTOR DEVICE

Organization Name

Micron Technology, Inc.

Inventor(s)

Harutaka Honda of Higashihiroshima (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240046987 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes an apparatus that includes two memory mats and a peripheral circuit between them. The peripheral circuit defines boundaries for the memory mats and includes wiring patterns in a wiring layer. Additionally, at least one dummy pattern is arranged along the first boundary.

  • The apparatus includes two memory mats and a peripheral circuit.
  • The peripheral circuit defines boundaries for the memory mats.
  • The peripheral circuit includes wiring patterns in a wiring layer.
  • At least one dummy pattern is arranged along the first boundary.

Potential Applications:

  • Memory devices: The apparatus can be used in memory devices to improve circuit layout and performance.
  • Integrated circuits: The technology can be applied in integrated circuits to enhance wiring efficiency and reduce signal interference.

Problems Solved:

  • Circuit layout optimization: The apparatus helps optimize the layout of memory mats and peripheral circuits, improving overall circuit performance.
  • Signal interference reduction: The wiring patterns and dummy patterns help reduce signal interference, enhancing the reliability of the circuit.

Benefits:

  • Improved circuit performance: The optimized layout and reduced signal interference result in improved overall circuit performance.
  • Enhanced reliability: By reducing signal interference, the apparatus increases the reliability of the circuit.
  • Efficient wiring: The wiring patterns and dummy patterns improve wiring efficiency, leading to better circuit functionality.


Original Abstract Submitted

an apparatus includes: a first memory mat; a second memory mat adjacent to the first memory mat; a peripheral circuit between the first memory mat and the second memory mat, the peripheral circuit defining a first boundary to the first memory mat and a second boundary to the second memory mat and including a plurality of wiring patterns in a wiring layer; and at least one dummy pattern in the wiring layer arranged on or along the first boundary.

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