20240038809. IMAGE SENSORS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
IMAGE SENSORS
Organization Name
Inventor(s)
Ja Meyung Kim of Suwon-si (KR)
IMAGE SENSORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240038809 titled 'IMAGE SENSORS
Simplified Explanation
The abstract describes an image sensor that includes a substrate with two faces, a photoelectric conversion area, an active area, an element isolation pattern, and a transfer gate electrode. The transfer gate electrode has a first portion extending through the element isolation pattern and a second portion on the active area.
- The image sensor includes a substrate with two faces, a photoelectric conversion area, an active area, an element isolation pattern, and a transfer gate electrode.
- The transfer gate electrode has a first portion extending through the element isolation pattern and a second portion on the active area.
- The first portion of the transfer gate electrode extends through the bottom face of the element isolation pattern at a lower vertical level than the bottom face of the element isolation pattern.
Potential applications of this technology:
- Image sensors can be used in various devices such as digital cameras, smartphones, and surveillance systems.
- The improved design of the image sensor can enhance the quality and performance of image capturing in these devices.
Problems solved by this technology:
- The element isolation pattern helps to define the active area and isolate it from other components, preventing interference and improving the accuracy of photoelectric conversion.
- The transfer gate electrode design allows for efficient transfer of signals from the active area to other parts of the image sensor, improving overall functionality and image quality.
Benefits of this technology:
- The improved image sensor design can result in higher resolution, better sensitivity, and improved image quality.
- The efficient transfer of signals allows for faster image processing and reduced noise in the captured images.
- The element isolation pattern helps to prevent cross-talk and interference, leading to more accurate and reliable image capturing.
Original Abstract Submitted
an image sensor includes a substrate including a first face and a second face, the second face being opposite the first face in a first direction; a photoelectric conversion area disposed in the substrate; an active area disposed in the substrate and on the photoelectric conversion area; an element isolation pattern extending from the first face of the substrate into the substrate and defining the active area; and a transfer gate electrode including: a first portion extending from the first face of the substrate and extending through the element isolation pattern; and a second portion disposed on the active area, wherein the first portion extends through a bottom face of the element isolation pattern, wherein a vertical level of a bottom face of the first portion is lower than a vertical level of the bottom face of the element isolation pattern.
