20240035200. METHOD FOR GROWING SINGLE CRYSTALS simplified abstract (EBNER Industrieofenbau GmbH)

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METHOD FOR GROWING SINGLE CRYSTALS

Organization Name

EBNER Industrieofenbau GmbH

Inventor(s)

Robert Ebner of Leonding (AT)

Kanaparin Ariyawong of Leonding (AT)

Ghassan Barbar of Neunkirchen (DE)

Chih-Yung Hsiung of Leonding (AT)

METHOD FOR GROWING SINGLE CRYSTALS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240035200 titled 'METHOD FOR GROWING SINGLE CRYSTALS

Simplified Explanation

The patent application describes a device for growing single crystals, specifically silicon carbide. The device includes a crucible with an outer lateral surface and an accommodation space for growing the single crystals. The accommodation space has an axial extension between a bottom section and an opening section. The device also includes at least one seed crystal layer, which is made up of multiple seed crystal plates arranged in a tessellated manner.

  • The device is designed for growing single crystals, particularly silicon carbide.
  • The crucible defines an accommodation space for the growth of the crystals.
  • The accommodation space has an axial extension between a bottom section and an opening section.
  • The seed crystal layer is assembled from multiple seed crystal plates arranged in a tessellated manner.

Potential applications of this technology:

  • Production of high-quality silicon carbide single crystals for use in electronic devices, such as power electronics and semiconductors.
  • Manufacturing of cutting tools and abrasives with improved hardness and wear resistance.
  • Development of high-temperature and high-power electronic devices for aerospace and automotive industries.

Problems solved by this technology:

  • Provides a controlled environment for growing single crystals, ensuring high purity and quality.
  • Enables the production of large and defect-free single crystals of silicon carbide.
  • Facilitates the scalability of single crystal growth, allowing for mass production.

Benefits of this technology:

  • Improved performance and efficiency of electronic devices due to the high-quality single crystals.
  • Enhanced durability and performance of cutting tools and abrasives.
  • Enables the development of advanced electronic devices capable of withstanding high temperatures and power levels.


Original Abstract Submitted

a device for growing single crystals, in particular of silicon carbide, includes a crucible, which crucible defines an outer lateral surface and moreover delimits an accommodation space with an axial extension between a bottom section and an opening section, wherein the accommodation space is designed for growing the single crystals, wherein the device includes at least one seed crystal layer, wherein the seed crystal layer is assembled from multiple seed crystal plates in a tessellated manner.

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