20240032269. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
MUNHYEON Kim of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240032269 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device. Here is a simplified explanation of the abstract:
- A first sacrificial and first active layer are formed on a substrate.
- A first mask pattern is formed on a portion of the substrate.
- The first sacrificial and first active layer are partially etched using the first mask pattern to expose a portion of the substrate's top surface.
- A semiconductor layer is formed on the exposed top surface of the substrate.
- Sacrificial layers and active layers are formed on the first active and semiconductor layer, with the uppermost layer being the second active layer.
- A second mask pattern is formed on a portion of the second active layer.
- A trench is formed using the second mask pattern, defining a first and second active pattern.
- The sacrificial layers are removed to form first and second channel patterns on the first and second active patterns, respectively, where the first active pattern includes the semiconductor layer.
Potential applications of this technology:
- Manufacturing of semiconductor devices such as integrated circuits and transistors.
- Fabrication of high-performance electronic components for various industries including telecommunications, computing, and consumer electronics.
Problems solved by this technology:
- Provides a method for forming active patterns and channel patterns in a semiconductor device with improved precision and control.
- Enables the formation of multiple active layers and channel patterns on a single substrate, increasing the functionality and performance of the semiconductor device.
Benefits of this technology:
- Enhanced precision and control in the manufacturing process result in improved device performance and reliability.
- The ability to form multiple active layers and channel patterns allows for the integration of more complex circuitry and functionality in a single semiconductor device.
- Increased efficiency and cost-effectiveness in the manufacturing of semiconductor devices.
Original Abstract Submitted
a method of manufacturing a semiconductor device includes forming a first sacrificial and first active layer on a substrate; forming a first mask pattern on a portion of the substrate; etching the first sacrificial and first active layer partially using the first mask pattern to expose a portion of a top surface of the substrate; forming a semiconductor layer on the exposed top surface of the substrate; forming sacrificial layers and active layers on the first active and semiconductor layer, the active layers including an uppermost second active layer; forming a second mask pattern on a portion of the second active layer; forming a trench using the second mask pattern, the trench defining a first and second active pattern; and removing the sacrificial layers to form a first and second channel patterns on the first and second active patterns, respectively, wherein the first active pattern includes the semiconductor layer.
