20240023325. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240023325 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device that includes different regions and a gate structure.
- The device has a substrate with a cell array region, a peripheral circuit region, and a connection region between them.
- A device isolation region defines a cell active region on the cell array region, a peripheral active region on the peripheral circuit region, and a dummy active region on the connection region.
- The gate structure includes a gate electrode that extends into the device isolation region on the connection region, crossing the cell active region on the cell array region.
- The dummy active region is adjacent to the cell active region, and the upper surface of the dummy active region that overlaps the gate structure is positioned at a lower level than the upper surface of the cell active region that overlaps the gate structure.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Mobile devices
- Computer hardware
Problems solved by this technology:
- Efficient use of space in a semiconductor device
- Improved performance and functionality of the device
- Reduction of interference between different regions of the device
Benefits of this technology:
- Increased integration density of components on a semiconductor device
- Enhanced performance and functionality of the device
- Improved reliability and stability of the device
Original Abstract Submitted
a semiconductor device includes a substrate having a cell array region, a peripheral circuit region, and a connection region between the cell array region and the peripheral circuit region; a device isolation region defining a cell active region on the cell array region, a peripheral active region on the peripheral circuit region, and a dummy active region on the connection region; and a gate structure including a gate electrode extending into the device isolation region on the connection region across the cell active region on the cell array region, wherein the dummy active region is adjacent to the cell active region, and wherein an upper surface of the dummy active region vertically overlapping the gate structure is positioned on a level lower than a level of an upper surface of the cell active region vertically overlapping the gate structure.
