20240021655. OPTOELECTRONIC DEVICE simplified abstract (COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES)

From WikiPatents
Jump to navigation Jump to search

OPTOELECTRONIC DEVICE

Organization Name

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor(s)

Edy Azrak of Grenoble Cedex 9 (FR)

OPTOELECTRONIC DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240021655 titled 'OPTOELECTRONIC DEVICE

Simplified Explanation

The abstract describes an optoelectronic device that includes a substrate and an active layer made of a material with defects. These defects have an energy structure defining different states in the valence band, band gap, and conduction band. The device is designed to cause excitation of the active layer, leading to electron transitions and photon emission or detection.

  • The device includes a substrate and an active layer made of a material with defects.
  • The defects in the material have an energy structure defining different states, including a ground state, metastable state, and excited state.
  • A device component is responsible for exciting the active layer and causing electron transitions.
  • Electrons can transition from the ground state to the excited state and then relax to the second spin state via the metastable state, resulting in photon emission.
  • Alternatively, electrons can transition from the second spin state to the excited state, allowing the active layer to detect photons by electron transitions from the first spin state to the second spin state through absorption.

Potential Applications:

  • Photon emission devices for lighting applications
  • Photodetectors for sensing and imaging applications
  • Optoelectronic devices for data communication and optical computing

Problems Solved by this Technology:

  • Efficient photon emission and detection in optoelectronic devices
  • Enhanced performance and functionality of optoelectronic devices
  • Integration of spin states for improved control and manipulation of electrons

Benefits of this Technology:

  • Improved energy efficiency in photon emission and detection processes
  • Enhanced sensitivity and accuracy in photodetection
  • Potential for compact and versatile optoelectronic devices


Original Abstract Submitted

an optoelectronic device includes a substrate, at least one active layer, formed on the substrate, and made of a material; defects, present in the material, and possessing an energy structure defining: a ground state in the valence band, including first and second spin states, a metastable state in the band gap, an excited state in the conduction band; a device for causing excitation of the active layer, which are configured to: make electrons transition to the excited state, then relax to the second spin state via the metastable state, so that the active layer may emit photons that make electrons transition from the second spin state to the first spin state; or make electrons transition from the second spin state to the excited state, so that the active layer may detect photons that make electrons transition from the first spin state to the second spin state by absorption.

Retrieved from "http://wikipatents.org/index.php?title=20240021655._OPTOELECTRONIC_DEVICE_simplified_abstract_(COMMISSARIAT_A_L%27ENERGIE_ATOMIQUE_ET_AUX_ENERGIES_ALTERNATIVES)&oldid=28689"