20240021421. VACUUM DEPOSITION INTO TRENCHES AND VIAS simplified abstract (Ascentool, Inc.)

From WikiPatents
Jump to navigation Jump to search

VACUUM DEPOSITION INTO TRENCHES AND VIAS

Organization Name

Ascentool, Inc.

Inventor(s)

George Xinsheng Guo of Palo Alto CA (US)

VACUUM DEPOSITION INTO TRENCHES AND VIAS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240021421 titled 'VACUUM DEPOSITION INTO TRENCHES AND VIAS

Simplified Explanation

The abstract describes a plasma deposition apparatus that utilizes a first plasma source with a closed-loop electrode and magnets to produce a plasma confined in a magnetic field. The magnets are embedded in the closed-loop electrode and generate a magnetic field in the center region of the electrode. This plasma is used to sputter atoms off a sputtering target or a backing plate.

  • The apparatus includes a first plasma source with a closed-loop electrode and magnets.
  • The closed-loop electrode defines a center region and has a central axis passing through it.
  • The magnets are positioned outside the inner surface of the closed-loop electrode.
  • The magnets can be partially embedded in the closed-loop electrode.
  • The magnets generate a magnetic field in the center region of the electrode.
  • The closed-loop electrode and magnets produce a plasma of ions.
  • The plasma is used to sputter atoms off a sputtering target or a backing plate.

Potential Applications:

  • Thin film deposition: The plasma deposition apparatus can be used for depositing thin films on various substrates, such as semiconductors, glass, or metals.
  • Surface modification: The plasma can be used to modify the surface properties of materials, such as improving adhesion or creating specific surface functionalities.
  • Coating production: The apparatus can be utilized for producing coatings with desired properties, such as hardness, corrosion resistance, or optical characteristics.

Problems Solved:

  • Efficient plasma confinement: The use of a magnetic field and closed-loop electrode allows for better confinement of the plasma, enhancing its stability and control.
  • Enhanced sputtering process: The plasma of ions produced by the closed-loop electrode and magnets improves the sputtering process, resulting in more efficient atom removal from the target or backing plate.

Benefits:

  • Improved deposition control: The apparatus provides better control over the deposition process, allowing for precise thickness and composition control of the deposited films.
  • Higher deposition rates: The enhanced sputtering process enables higher deposition rates, reducing the overall processing time.
  • Versatile applications: The plasma deposition apparatus can be used in various industries, including semiconductor manufacturing, optics, and surface engineering.


Original Abstract Submitted

a plasma deposition apparatus includes a first plasma source that can produce a plasma confined in a magnetic field. the first plasma source includes a closed-loop electrode defining a center region therein and a central axis through the central region, and one or more magnets that are outside an inner surface of the closed-loop electrode. the magnets can produce a magnetic field in the center region. the one or more magnets can be at least partially embedded in the closed-loop electrode. the closed-loop electrode and the magnets can produce a plasma of ions to sputter atoms off a sputtering target or a backing plate.

Retrieved from "http://wikipatents.org/index.php?title=20240021421._VACUUM_DEPOSITION_INTO_TRENCHES_AND_VIAS_simplified_abstract_(Ascentool,_Inc.)&oldid=28676"