20240014317. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240014317 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device that includes a semiconductor layer made of SiC (silicon carbide). The device has a transistor element with an impurity region formed in the front surface of the semiconductor layer. A first contact wiring is formed on the back surface of the semiconductor layer, which serves as an electrode connected to the transistor element. The first contact wiring consists of a first wiring layer that forms an ohmic contact with the semiconductor layer without a silicide contact, and a second wiring layer formed on top of the first wiring layer with a lower resistivity.
- The semiconductor device is made of SiC, a semiconductor material known for its high temperature and high voltage capabilities.
- The device includes a transistor element with an impurity region, which allows for the control of current flow.
- The first contact wiring on the back surface of the semiconductor layer provides electrical connection to the transistor element.
- The first contact wiring consists of a first wiring layer that forms an ohmic contact with the semiconductor layer, ensuring low resistance.
- A second wiring layer with lower resistivity is formed on top of the first wiring layer, improving the overall conductivity of the device.
Potential applications of this technology:
- Power electronics: SiC-based semiconductor devices are suitable for high-power applications, such as electric vehicles, renewable energy systems, and industrial machinery.
- High-temperature environments: The high temperature capability of SiC makes it suitable for applications in aerospace, automotive, and oil and gas industries where extreme temperatures are present.
- High-voltage applications: SiC devices can handle higher voltages compared to traditional silicon-based devices, making them suitable for power transmission and distribution systems.
Problems solved by this technology:
- High-temperature operation: SiC devices can operate at higher temperatures without significant performance degradation, addressing the limitations of silicon-based devices.
- High-power requirements: SiC devices can handle higher power levels, enabling more efficient and compact power electronic systems.
- High-voltage demands: SiC devices can withstand higher voltages, reducing the need for additional components in high-voltage applications.
Benefits of this technology:
- Improved efficiency: SiC devices have lower power losses and higher switching speeds, resulting in improved energy efficiency.
- Compact design: SiC devices can handle higher power levels in smaller packages, allowing for more compact and lightweight electronic systems.
- Enhanced reliability: SiC devices have better thermal conductivity and can operate at higher temperatures, leading to increased reliability and longer lifespan.
Original Abstract Submitted
a semiconductor device includes a semiconductor layer made of sic. a transistor element having an impurity region is formed in a front surface portion of the semiconductor layer. a first contact wiring is formed on a back surface portion of the semiconductor layer, and defines one electrode electrically connected to the transistor element. the first contact wiring has a first wiring layer forming an ohmic contact with the semiconductor layer without a silicide contact and a second wiring layer formed on the first wiring layer and having a resistivity lower than that of the first wiring layer.
