20240014011. SUBSTRATE PROCESSING APPARATUS simplified abstract (WONIK IPS CO., LTD.)
Contents
SUBSTRATE PROCESSING APPARATUS
Organization Name
Inventor(s)
Yong Taek Eom of Cheonan-si Chungcheongnam-do (KR)
Kang Hee Kim of Osan-si Gyeonggi-do (KR)
Hyun Kim of Gwangju-si Gyeonggi-do (KR)
SUBSTRATE PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240014011 titled 'SUBSTRATE PROCESSING APPARATUS
Simplified Explanation
The present invention is a substrate processing apparatus that is capable of processing a substrate using plasma. It includes a process chamber with an opening in the upper portion, a gas injection part coupled to the opening to define a processing space for substrate processing, and a plurality of plasma generation parts disposed above the gas injection part to generate plasma and radicalize the process gas.
- The substrate processing apparatus has a process chamber with an opening and a gas injection part that define a processing space for substrate processing.
- The gas injection part injects a process gas into the processing space.
- The plurality of plasma generation parts are disposed above the gas injection part and generate plasma.
- The plasma generation parts radicalize the process gas, converting it into a radicalized process gas.
- The radicalized process gas is then supplied into the gas injection part.
Potential applications of this technology:
- Semiconductor manufacturing: The substrate processing apparatus can be used for plasma etching or deposition processes in the fabrication of semiconductor devices.
- Flat panel display production: It can be utilized for plasma treatment of substrates used in the production of flat panel displays.
- Solar cell manufacturing: The apparatus can be employed for plasma processing of substrates in the production of solar cells.
Problems solved by this technology:
- Improved substrate processing: The use of plasma generation parts helps in radicalizing the process gas, leading to more efficient and controlled substrate processing.
- Enhanced uniformity: The apparatus ensures uniform distribution of the radicalized process gas, resulting in improved uniformity of substrate processing.
- Reduced contamination: The plasma generation parts help in preventing contamination by radicalizing the process gas, reducing the risk of impurities on the substrate.
Benefits of this technology:
- Higher processing efficiency: The radicalized process gas enables faster and more effective substrate processing, reducing processing time and increasing throughput.
- Improved process control: The apparatus allows for precise control of the plasma generation and gas injection, leading to better control over the substrate processing parameters.
- Enhanced product quality: The uniform distribution of the radicalized process gas ensures consistent and high-quality substrate processing, resulting in improved product performance.
Original Abstract Submitted
the present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of processing a substrate using plasma. a substrate processing apparatus includes: a process chamber having an opening in an upper portion thereof; a gas injection part coupled to the opening to define a processing space for substrate processing together with the process chamber and inject a process gas into the processing space; and a plurality of plasma generation parts disposed above the gas injection part to generate plasma and configured to radicalize the process gas so as to supply the radicalized process gas into the gas injection part, wherein one and the other of the plurality of plasma generation parts are disposed at heights different from each other from a bottom surface of the gas injection part.
