18971358. SEMICONDUCTOR STRUCTURE (MediaTek Inc.)
Contents
SEMICONDUCTOR STRUCTURE
Organization Name
Inventor(s)
Po-Chao Tsao of Hsinchu City TW
SEMICONDUCTOR STRUCTURE
This abstract first appeared for US patent application 18971358 titled 'SEMICONDUCTOR STRUCTURE
Original Abstract Submitted
A semiconductor structure includes a substrate, a first well region on the substrate, a shallow trench isolation (STI) region over the first well region, and a first transistor. The first transistor includes a first fin formed on the first well region, a first gate electrode formed on the first fin, and a first doping region formed on the first fin. The semiconductor structure further includes a first power rail on the first well region and in the STI region and a first source/drain contact over the first doping region and the first power rail to electrically connect the first doping region to the first power rail. A bottom surface of first source/drain contact is in direct contact with the STI region.
