18940988. SEMICONDUCTOR STRUCTURE (Taiwan Semiconductor Manufacturing Company, LTD.)

SEMICONDUCTOR STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, LTD.

Inventor(s)

Meng-Hsuan Hsiao of Hsinchu City (TW)

Winnie Victoria Wei-Ning Chen of Zhubei City (TW)

Tung Ying Lee of Hsinchu City (TW)

SEMICONDUCTOR STRUCTURE

This abstract first appeared for US patent application 18940988 titled 'SEMICONDUCTOR STRUCTURE

Original Abstract Submitted

Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a first transistor over a substrate, including a first channel layer over the substrate, a second channel layer over and spaced apart from the first channel layer in a first direction, and a first source/drain structure attached to the first channel layer and the second channel layer. The semiconductor structure further includes a second transistor over the substrate, including a third channel layer over the substrate, a fourth channel layer over and spaced apart from the third channel layer in the first direction, and a second source/drain structure attached to the third channel layer and the fourth channel layer. In addition, a dimension of the first source/drain structure in the first direction is different from a dimension of the second source/drain structure in the first direction.