18897948. NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT (NICHIA CORPORATION)
NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
Organization Name
Inventor(s)
Shingo Kanehira of Anan-shi JP
Yoshitaka Kawata of Itano-gun JP
Hiroki Abe of Komatsushima-shi JP
NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
This abstract first appeared for US patent application 18897948 titled 'NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
Original Abstract Submitted
A nitride semiconductor light emitting element includes: a first n-type semiconductor layer, a first p-type semiconductor layer disposed above and in contact with the first n-type semiconductor layer; a first superlattice layer disposed above the first p-type semiconductor layer and containing a p-type impurity; an active layer disposed above the first superlattice layer, a second n-type semiconductor layer disposed above the active layer; a first electrode electrically connected to the first n-type semiconductor layer; and a second electrode electrically connected to the second n-type semiconductor layer.