18895395. SEMICONDUCTOR DEVICE (ROHM CO., LTD.)
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Masaki Nagata of Kyoto-shi (JP)
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18895395 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
A semiconductor device includes a semiconductor layer; a trench formed in the semiconductor layer and including a side wall, an insulation layer formed on the semiconductor layer; and a gate electrode arranged in the trench. The insulation layer includes a gate insulation portion located between the semiconductor layer and the gate electrode, and covering the side wall of the trench. The gate electrode includes a first conductive portion contacting the gate insulation portion, and a second conductive portion including a side surface contacting the first conductive portion. The first conductive portion is formed from polysilicon, and the second conductive portion is formed from metal.
