18819238. FILM-FORMING METHOD AND FILM-FORMING APPARATUS (Tokyo Electron Limited)
FILM-FORMING METHOD AND FILM-FORMING APPARATUS
Organization Name
Inventor(s)
Yohei Matsuyama of Yamanashi (JP)
Yuki Kikuchi of Yamanashi (JP)
FILM-FORMING METHOD AND FILM-FORMING APPARATUS
This abstract first appeared for US patent application 18819238 titled 'FILM-FORMING METHOD AND FILM-FORMING APPARATUS
Original Abstract Submitted
A film-forming method according to an aspect of the present disclosure forms a film containing a silicon atom and a nitrogen atom on a surface of a substrate including a metal film at the surface of the substrate. The film-forming method includes: supplying a boron-containing gas and a first nitriding gas to the substrate, thereby forming a first film on the surface, the first film containing a boron atom and a nitrogen atom; and supplying a silicon-containing gas and a second nitriding gas to the substrate, thereby forming a second film on the first film, the second film containing a silicon atom and a nitrogen atom.