18808369. SEMICONDUCTOR DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Doohyun Lee of Hwaseong-si (KR)
Heonjong Shin of Yongin-si (KR)
Seon-Bae Kim of Hwaseong-si (KR)
Minchan Gwak of Hwaseong-si (KR)
Jinyoung Park of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18808369 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
A semiconductor device may include an active pattern on a substrate, a source/drain pattern on the active pattern, a channel pattern connected to the source/drain pattern, a gate electrode on the channel pattern, an active contact on the source/drain pattern, a first lower interconnection line on the gate electrode, and a second lower interconnection line on the active contact and at the same level as the first lower interconnection line. The gate electrode may include an electrode body portion and an electrode protruding portion, wherein the electrode protruding portion protrudes from a top surface of the electrode body portion and is in contact with the first lower interconnection line thereon. The active contact may include a contact body portion and a contact protruding portion, wherein the contact protruding portion protrudes from a top surface of the contact body portion and is in contact with the second lower interconnection line thereon.