18769038. PHOTORESIST DEVELOPMENT WITH HALIDE CHEMISTRIES (LAM RESEARCH CORPORATION)

PHOTORESIST DEVELOPMENT WITH HALIDE CHEMISTRIES

Organization Name

LAM RESEARCH CORPORATION

Inventor(s)

Samantha SiamHwa Tan of Newark CA (US)

Jengyi Yu of San Ramon CA (US)

Da Li of Newark CA (US)

Yiwen Fan of Fremont CA (US)

Yang Pan of Los Altos CA (US)

Jeffrey Marks of Saratoga CA (US)

Richard A. Gottscho of Menlo Park CA (US)

Daniel Peter of Sunnyvale CA (US)

Timothy William Weidman of Sunnyvale CA (US)

Boris Volosskiy of San Jose CA (US)

Wenbing Yang of Campbell CA (US)

PHOTORESIST DEVELOPMENT WITH HALIDE CHEMISTRIES

This abstract first appeared for US patent application 18769038 titled 'PHOTORESIST DEVELOPMENT WITH HALIDE CHEMISTRIES

Original Abstract Submitted

Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.