18766624. GATE DRIVE UNIT (Mitsubishi Electric Corporation)
GATE DRIVE UNIT
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
Takashi Watanabe of Fukuoka-shi (JP)
Shohei Sano of Fukuoka-shi (JP)
Shota Ueno of Fukuoka-shi (JP)
GATE DRIVE UNIT
This abstract first appeared for US patent application 18766624 titled 'GATE DRIVE UNIT
Original Abstract Submitted
The Vce detection circuit detects a rise of an inter-electrode voltage between a positive electrode and a negative electrode when the semiconductor switching element is being turned off. The drive circuit is configured to regulate a time to lower the gate drive capability from a first drive capability to a second drive capability based on a detection result of the Vce detection circuit during the turn-off operation of the semiconductor switching element.