18761378. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
Contents
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor(s)
Shunpei Yamazaki of Setagaya (JP)
Junichi Koezuka of Atsugi (JP)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18761378 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Original Abstract Submitted
In a transistor including an oxide semiconductor layer, an oxide insulating layer is formed so as to be in contact with the oxide semiconductor layer. Then, oxygen is introduced (added) to the oxide semiconductor layer through the oxide insulating layer, and heat treatment is performed. Through these steps of oxygen introduction and heat treatment, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor layer, so that the oxide semiconductor layer is highly purified.
