18755298. FUSE CELL STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
FUSE CELL STRUCTURE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Jhon Jhy Liaw of Hsinchu County (TW)
FUSE CELL STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18755298 titled 'FUSE CELL STRUCTURE
The semiconductor structure described in the abstract includes first and second transistors, a program line, metal plates, insulators, and anti-fuse elements.
- The first metal plate is over the first and second transistors.
- A first insulator is over the first metal plate.
- A second metal plate is over the first insulator.
- A second insulator is over the second metal plate.
- A third metal plate is over the second insulator.
The source terminal of the first transistor is connected to the first metal plate, while the source terminal of the second transistor is connected to the third metal plate. The program line is connected to the second metal plate.
Potential Applications: - This technology could be used in the development of advanced semiconductor devices. - It may find applications in the field of integrated circuits and memory storage.
Problems Solved: - This technology provides a way to create anti-fuse elements in a semiconductor structure. - It allows for efficient electrical connections between transistors and metal plates.
Benefits: - Improved performance and reliability of semiconductor devices. - Enhanced functionality in integrated circuits and memory systems.
Commercial Applications: Title: Advanced Semiconductor Structures for Enhanced Performance This technology could be utilized in the production of high-performance electronic devices, leading to advancements in the semiconductor industry. The market implications include increased efficiency and reliability in various electronic applications.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching semiconductor structures, anti-fuse elements, and advanced transistor configurations.
Frequently Updated Research: Stay updated on the latest research in semiconductor technology, anti-fuse elements, and integrated circuit design to understand the evolving landscape of this field.
Questions about Semiconductor Structures: 1. What are the key advantages of using anti-fuse elements in semiconductor structures? Anti-fuse elements provide programmable connections that can enhance the functionality and flexibility of semiconductor devices.
2. How does the configuration of metal plates and insulators impact the performance of transistors in this semiconductor structure? The specific arrangement of metal plates and insulators plays a crucial role in ensuring efficient electrical connections and overall device performance.
Original Abstract Submitted
A semiconductor structure includes first and second transistors each having a source terminal, a drain terminal, and a gate terminal. The semiconductor structure further includes a program line; a first metal plate over the first and the second transistors; a first insulator over the first metal plate; a second metal plate over the first insulator; a second insulator over the second metal plate; and a third metal plate over the second insulator. The first metal plate, the first insulator, and the second metal plate form a first anti-fuse element. The second metal plate, the second insulator, and the third metal plate form a second anti-fuse element. The source terminal of the first transistor is electrically connected to the first metal plate. The source terminal of the second transistor is electrically connected to the third metal plate. The program line is electrically connected to the second metal plate.
