18754706. BACKSIDE CAPACITOR TECHNIQUES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
BACKSIDE CAPACITOR TECHNIQUES
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Min-Feng Kao of Chiayi City (TW)
Dun-Nian Yaung of Taipei City (TW)
Hsing-Chih Lin of Tainan City (TW)
Jen-Cheng Liu of Hsin-Chu City (TW)
BACKSIDE CAPACITOR TECHNIQUES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18754706 titled 'BACKSIDE CAPACITOR TECHNIQUES
Simplified Explanation: This patent application describes a method for forming semiconductor devices on the frontside of a semiconductor substrate, while also creating a backside capacitor and interconnect structure on the backside of the substrate.
- Conductive and insulating layers are alternately formed in a trench on the backside of the substrate to create the backside capacitor.
- A backside interconnect structure is then formed to connect to the capacitor electrodes of the backside capacitor.
Key Features and Innovation:
- Formation of semiconductor devices on the frontside of the substrate.
- Creation of a backside capacitor by alternating conductive and insulating layers in a trench on the backside.
- Formation of a backside interconnect structure to connect to the capacitor electrodes.
Potential Applications: This technology could be used in the semiconductor industry for the development of advanced integrated circuits and electronic devices.
Problems Solved: This technology addresses the need for efficient and compact capacitor structures in semiconductor devices.
Benefits:
- Improved performance of semiconductor devices.
- Enhanced integration of capacitors in a semiconductor substrate.
- Increased efficiency in electronic circuits.
Commercial Applications: The technology could be applied in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.
Questions about Semiconductor Device Formation: 1. How does the formation of a backside capacitor improve the performance of semiconductor devices? 2. What are the potential challenges in implementing this method in large-scale semiconductor manufacturing processes?
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Original Abstract Submitted
Some embodiments relate to a method. In the method, semiconductor devices are formed on a frontside of a semiconductor substrate. A trench is formed in a backside of the semiconductor substrate. Conductive and insulating layers are alternatingly formed in the trench on the backside of the semiconductor substrate to establish a backside capacitor. A backside interconnect structure is formed on the backside of the semiconductor substrate to couple to capacitor electrodes of the backside capacitor.
