18753469. Inner Spacer Liner simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
Inner Spacer Liner
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Jin-Mu Yin of Kaohsiung City (TW)
Wei-Yang Lee of Taipei City (TW)
Chih-Hao Yu of Tainan City (TW)
Yen-Ting Chen of Taichung City (TW)
Chia-Pin Lin of Hsinchu County (TW)
Inner Spacer Liner - A simplified explanation of the abstract
This abstract first appeared for US patent application 18753469 titled 'Inner Spacer Liner
The present disclosure introduces a semiconductor device and a method of forming it. The device includes source/drain features, channel members, inner spacer features, a gate structure, and a semiconductor liner.
- Source/drain features are placed over a substrate.
- Channel members connect the source/drain features.
- Inner spacer features are interleaved with the channel members.
- The gate structure wraps around each channel member.
- A semiconductor liner is positioned between the gate structure and inner spacer features.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It may find applications in the electronics industry for high-performance computing.
Problems Solved: - Enhances the performance and efficiency of semiconductor devices. - Improves the overall functionality of electronic components.
Benefits: - Increased speed and reliability of semiconductor devices. - Enhanced control and precision in electronic circuits.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the production of cutting-edge electronic devices for various industries, including telecommunications, computing, and automotive sectors. The improved efficiency and performance of these devices can lead to a competitive edge in the market.
Questions about Semiconductor Device Technology: 1. How does the semiconductor liner contribute to the overall performance of the device?
- The semiconductor liner helps to enhance the electrical properties and stability of the device by providing a barrier between the gate structure and inner spacer features.
2. What are the key advantages of using inner spacer features in the semiconductor device?
- The inner spacer features play a crucial role in controlling the channel width and improving the overall functionality of the device.
Original Abstract Submitted
The present disclosure provides a semiconductor device and a method of forming the same. A semiconductor device according to the present disclosure includes a first source/drain feature and a second source/drain feature over a substrate, a plurality of channel members extending between the first source/drain feature and the second source/drain feature, a plurality of inner spacer features interleaving the plurality of channel members, a gate structure wrapping around each of the plurality of channel members, and a semiconductor liner sandwiched between the gate structure and each of the plurality of inner spacer features.
