18753229. PHOTORESIST PATTERNING IN MULTI-DEPTH NANOWELLS (ILLUMINA, INC.)
Contents
PHOTORESIST PATTERNING IN MULTI-DEPTH NANOWELLS
Organization Name
Inventor(s)
Daniel Wright of San Diego CA (US)
Alexandra Szemjonov of Cambridge (GB)
Wayne N. George of London (GB)
Francesca Patel-burrows of Cambridge (GB)
PHOTORESIST PATTERNING IN MULTI-DEPTH NANOWELLS
This abstract first appeared for US patent application 18753229 titled 'PHOTORESIST PATTERNING IN MULTI-DEPTH NANOWELLS
Original Abstract Submitted
Embodiments of the present disclosure relate to patterned substrates with functionalized surface such as flow cells, as well as methods of fabricating the patterned substrate. In particular, patterned substrates of the present disclosure may be prepared using two or more imprint resin layers, one of which acts as a photomask for the photoresist during substrate patterning, without the need of any metallic photomask. Embodiments of the patterned substrate may be used for simultaneous paired-end sequencing methods.
