18752866. MAGNETIC MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Bae-Seong Kwon of Incheon (KR)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18752866 titled 'MAGNETIC MEMORY DEVICE
Simplified Explanation: The patent application describes a magnetic memory device with a unique structure that includes a lower contact plug and a data storage structure stacked on top of it.
- The data storage structure consists of a bottom electrode, a magnetic tunnel junction pattern, and a top electrode.
- The lower contact plug and the data storage structure have different thicknesses in a specific direction.
- The lower contact plug is significantly thicker than the data storage structure.
Key Features and Innovation:
- Unique magnetic memory device structure with a lower contact plug and data storage structure.
- Sequential stacking of bottom electrode, magnetic tunnel junction pattern, and top electrode.
- Significant difference in thickness between the lower contact plug and the data storage structure.
Potential Applications:
- Data storage devices
- Magnetic memory applications
- Computing systems
Problems Solved:
- Enhanced data storage capabilities
- Improved magnetic memory performance
- Efficient computing processes
Benefits:
- Increased data storage capacity
- Faster magnetic memory operations
- Enhanced overall computing efficiency
Commercial Applications: Potential commercial applications include:
- Manufacturing of data storage devices
- Integration into computing systems for improved performance
- Development of magnetic memory technologies for various industries
Questions about Magnetic Memory Device: 1. How does the unique structure of the magnetic memory device contribute to its performance? 2. What are the specific advantages of having a thicker lower contact plug in the device?
Frequently Updated Research: Stay updated on the latest advancements in magnetic memory technology to leverage the full potential of this innovative device.
Original Abstract Submitted
A magnetic memory device includes a lower contact plug on a substrate and a data storage structure on the lower contact plug. The data storage structure includes a bottom electrode, a magnetic tunnel junction pattern, and a top electrode that are sequentially stacked on the lower contact plug. The lower contact plug and the data storage structure have a first thickness and a second thickness, respectively, in a first direction perpendicular to a top surface of the substrate. The first thickness of the lower contact plug is about 2.0 to 3.6 times the second thickness of the data storage structure.
